GB/T 6619-2009 English PDF

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GB/T 6619-2009: Test methods for bow of silicon wafers
Status: Valid

GB/T 6619: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 6619-2009	259	Add to Cart	3 days	Test methods for bow of silicon wafers	Valid
GB/T 6619-1995	279	Add to Cart	3 days	Test methods for bow of silicon slices	Obsolete
GB 6619-1986	199	Add to Cart	2 days	Standard method for measuring bow of silicon slices	Obsolete

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Basic data

Standard ID: GB/T 6619-2009 (GB/T6619-2009)
Description (Translated English): Test methods for bow of silicon wafers
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 11,145
Date of Issue: 2009-10-30
Date of Implementation: 2010-06-01
Older Standard (superseded by this standard): GB/T 6619-1995
Quoted Standard: GB/T 2828.1; GB/T 14264
Adopted Standard: SEMI MF534-0706, MOD
Regulation (derived from): National Standard Approval Announcement 2009 No.12 (Total No.152)
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the monocrystalline silicon cutting discs, grinding pieces, polished (hereinafter referred to as silicon) bending non-contact testing methods. This standard applies to measure the diameter of not less than 50 mm, a thickness of not less than 180 ��m, diameter and thickness ratio is not greater than the curvature of the circular wafers of 250. The purpose of this test method is used for incoming inspection or process control. This standard also applies to the measurement of the curvature of the other semiconductor wafers.

GB/T 6619-2009: Test methods for bow of silicon wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test methods for bow of silicon wafers ICS 29.045 H80 National Standards of People's Republic of China Replacing GB/T 6619-1995 Wafer curvature testing methods Posted 2009-10-30 2010-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This revised standard adopts SEMIMF534-0706 "wafer curvature testing methods." This standard compared with SEMIMF534-0706, the main changes are as follows. --- The standard format of press-contact measurement method GB/T 1.1 formatting; --- This standard increases the non-contact measuring method according to China's actual production situation. This standard replaces GB/T 6619-1995 "wafer curvature testing methods." This standard compared with GB/T 6619-1995, the main changes are as follows. --- Expanding the measurable range of wafer diameter not less than 25mm, a thickness of not less than 180μm, diameter and thickness ratio of not more than 250 circular silicon wafer; --- Increasing the reference documents, terminology, meaning use, measuring environmental conditions and interference factors section; --- Revised instrument calibration content. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) proposed. This standard by the National Standardization Technical Committee materials and equipment at the Technical Committee of semiconductor material. This standard was drafted. Luoyang monocrystalline silicon limited liability company. The main drafters of this standard. Liu Yuqin, Jiang Jianguo, Pingjiao Liang, Zhang Jingwen. This standard superseded standard previously issued as follows. --- GB 6619-1986, GB/T 6619-1995. Wafer curvature testing methods 1-contact measurement method

1 Scope

This standard specifies the silicon single crystal cutting, grinding film, polished (hereinafter referred to as silicon) contact measuring method curvature. This standard applies to measuring the diameter of not less than 25mm, a thickness of not less than 180μm, diameter and thickness ratio of not more than 250 circular Curvature of the silicon wafer. The purpose of this test method is used for incoming inspection and process control. This standard is also applicable to other semiconductor wafer measurement Curvature.

2 Normative references

The following documents contain provisions which, through reference in this standard and become the standard terms. For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents. For undated reference documents, the latest versions apply to this standard. GB/T 2828.1 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch inspection sampling plan (GB/T 2828.1-2003, ISO 2859-1.1999, IDT) GB/T 14264 semiconductor material terms

3 Terms

GB/T 14264 and specified the following terms and definitions apply to this standard. 3.1 The front surface of the semiconductor wafer, in the above has been manufactured or exposed surface of the semiconductor device fabrication. 3.2 Deflected without holding the wafer in planes and in the center of the reference plane between the planes. The planes designated by the reference plane is smaller than the crystal Flat sheet nominal diameter of three equidistant points on the circumference of the diameter of the decision. 3.3 Positive and back surfaces of the wafer track equidistant points.

4 Method summary

The wafer is placed on the base ring 3 pivot, pivot 3 formed a datum plane, measuring wafer center biasing low pressure shift indicator Distance from the reference plane, flip wafers, repeat the measurement. Half the difference between the two measurements says that the curvature of the wafer.

5 disturbances

5.1 test method is to measure the degree of curvature based on a limited number of points, the rest of the wafer geometry changes may not be detected. 5.2 strut thickness variation of silicon contact region or the central region can lead to erroneous measurement results, such a thickness change is caused by debris, James Dirt and wafer surface defects such as. hill, pit, cutting steps, etc., causing ripples. 5.3 If the median plane bending is not always in the same direction, with the degree of bending deformation can not fully represent the median plane, the present method for the determination The value may not represent the median plane with the reference plane deviation. ......

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