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GB/T 6351-1998 English PDF

US$389.00 ยท In stock
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GB/T 6351-1998: Semiconductor devices. Discrete devices. Part 2: Rectifier diodes Section One. Blank detail specification for rectifier diodes(including avalanche recti-fier diodes)1, ambient and case-rated, up to 100A

GB/T 6351: Historical versions

Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 6351-1998389 Add to Cart 3 days Semiconductor devices. Discrete devices. Part 2: Rectifier diodes Section One. Blank detail specification for rectifier diodes(including avalanche recti-fier diodes)1, ambient and case-rated, up to 100A  
GB/T 6351-1986RFQ ASK 3 days Blank detail specification for rectifier diodes (including avalanche rectifier diodes) ambient and case-rated, up to 100A Obsolete

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Basic data

Standard ID: GB/T 6351-1998 (GB/T6351-1998)
Description (Translated English): Semiconductor devices. Discrete devices. Part 2: Rectifier diodes Section One. Blank detail specification for rectifier diodes(including avalanche recti-fier diodes)1, ambient and case-rated, up to 100A
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L43
Classification of International Standard: 31.080.10
Word Count Estimation: 11,121
Date of Issue: 11/17/1998
Date of Implementation: 6/1/1999
Older Standard (superseded by this standard): GB/T 6351-1986
Adopted Standard: IEC 60747-2-1-1989, IDT
Issuing agency(ies): State Bureau of Technical Supervision
Summary: This standard specifies a detailed specification of the basic principles of the development environment or shell rated rectifier diodes (including avalanche rectifier diodes), to develop all the detailed specifications within the range should be as detailed as possible consistent with the norms of the blank. This standard is GB/T 4589. 1-1989 "discrete semiconductor devices and integrated circuits norms" (IEC 747-10: 1984) and GB/T 12560-1990 "discrete semiconductor devices specification" (IEC 747-11: 1985), a series of blank detail specification relating to one.
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