GB/T 41765-2022 English PDFUS$299.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 41765-2022: Test method for dislocation density of monocrystalline silicon carbide Status: Valid
Basic dataStandard ID: GB/T 41765-2022 (GB/T41765-2022)Description (Translated English): Test method for dislocation density of monocrystalline silicon carbide Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H21 Classification of International Standard: 77.040 Word Count Estimation: 14,141 Date of Issue: 2022-10-12 Date of Implementation: 2023-05-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 41765-2022: Test method for dislocation density of monocrystalline silicon carbide---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.Test method for dislocation density of monocrystalline silicon carbide ICS 77.040 CCSH21 National Standards of People's Republic of China Test method for dislocation density of silicon carbide single crystal Released on 2022-10-12 2023-05-01 implementation State Administration for Market Regulation Released by the National Standardization Management Committee forewordThis document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules for Standardization Documents" drafting. Please note that some contents of this document may refer to patents. The issuing agency of this document assumes no responsibility for identifying patents. This document is prepared by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard It is jointly proposed and managed by the Materials Subcommittee (SAC/TC203/SC2) of the Chemical Technology Committee. This document was drafted by. Beijing Tianke Heda Semiconductor Co., Ltd., Nonferrous Metal Technology and Economic Research Institute Co., Ltd. The main drafters of this document. Peng Tonghua, She Zongjing, Lou Yanfang, Wang Dajun, Zhao Ning, Wang Bo, Guo Yu, Yang Jian, Li Suqing. Test method for dislocation density of silicon carbide single crystal1 ScopeThis document specifies a test method for the dislocation density of silicon carbide single crystals. This document is applicable to the test of the dislocation density of silicon carbide single crystal whose crystal plane deviates from the {0001} plane and deviates from the < 1120> direction by 0°~8°.2 Normative referencesThe contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document. GB/T 14264 Terminology of semiconductor materials GB/T 30656 Silicon carbide single crystal polished wafer3 Terms and DefinitionsThe following terms and definitions defined in GB/T 14264 and GB/T 30656 apply to this document. 3.1 A dislocation in which the dislocation line and Burgers vector are parallel. 3.2 Dislocations perpendicular to the dislocation line and Burgers vector. 3.3 Both the dislocation line and the Burgers vector are located in the {0001} plane.4 principlesRevealing dislocations in silicon carbide single crystals using a selective chemical etch technique. Due to the distortion of the lattice around dislocations in SiC single crystals, When the surface of silicon carbide single crystal is etched with potassium hydroxide melt, the corrosion speed is faster at the outcropping of dislocations on the surface of silicon carbide single crystal, so it is easy to It is easy to form corrosion pits with specific shapes composed of some low-index surfaces. Observe the silicon carbide single crystal silicon surface under a microscope and follow certain rules The number of corrosion pits with a specific shape is counted, and the number of corrosion pits per unit field of view is the dislocation density.5 Interfering factors5.1 During the corrosion process, the temperature of the potassium hydroxide melt and the corrosion time will affect the corrosion effect of the sample and affect the test results. 5.2 The use time of potassium hydroxide melt during the corrosion process will affect the corrosion effect of the sample. It is recommended that the use time of the melt should not exceed 24h. Replace in time when expired. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 41765-2022_English be delivered?Answer: Upon your order, we will start to translate GB/T 41765-2022_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. 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