GB/T 41751-2022 English PDFUS$189.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 41751-2022: Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers Status: Valid
Basic dataStandard ID: GB/T 41751-2022 (GB/T41751-2022)Description (Translated English): Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H21 Classification of International Standard: 77.040 Word Count Estimation: 10,142 Date of Issue: 2022-10-14 Date of Implementation: 2023-02-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 41751-2022: Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Test method for radius of curvature of crystal plane in GaN singlecrystal substrate wafers ICS 77.040 CCSH21 National Standards of People's Republic of China Test method for radius of curvature of gallium nitride single crystal substrate sheet Published on 2022-10-12 2023-02-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration forewordThis document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents" drafted. Please note that some content of this document may be patented. The issuing agency of this document assumes no responsibility for identifying patents. This document is jointly developed by the National Standardization Technical Committee for Semiconductor Equipment and Materials (SAC/TC203) and the National Standard for Semiconductor Equipment and Materials The material sub-technical committee (SAC/TC203/SC2) of the Chemical Technology Committee jointly proposed and managed it. This document is drafted by. Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, Suzhou Navier Technology Co., Ltd., China Electronics The 46th Research Institute of Science and Technology Group Corporation, Harbin Ored Optoelectronics Technology Co., Ltd., Xiamen Keyuer Technology Co., Ltd., Shanxi Huajing Henderson New Materials Co., Ltd., Fujian Zhaoyuan Optoelectronics Co., Ltd. The main drafters of this document. Qiu Yongxin, Xu Ke, Wang Jianfeng, Ren Guoqiang, Li Tengkun, Zuo Hongbo, Zheng Shunan, Liu Lina, Yang Xinhong, Kuang Guangning, Ding Chongdeng, Chen Youyong. Test method for radius of curvature of gallium nitride single crystal substrate sheet1 ScopeThis document specifies a method for measuring the radius of curvature of gallium nitride single crystal substrate platelets using a high-resolution X-ray diffractometer. This document is applicable to the measurement of the curvature radius of the gallium nitride single crystal substrate prepared by chemical vapor deposition and other methods. The test of the radius of curvature of the wafer surface can be carried out with reference to this document.2 Normative referencesThe contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document. GB/T 14264 Terms of Semiconductor Materials3 Terms and DefinitionsThe terms and definitions defined in GB/T 14264 and the following apply to this document. 3.1 Diffraction plane The plane formed by the incident X-ray beam and the diffracted beam. 3.2 The intersection of the nominal crystal plane of the substrate sheet and the vertical plane passing through the center point of the substrate sheet can be approximately regarded as an arc, and the arc corresponds to the radius. Note 1.In this document, the radius of curvature of the crystal plane has a sign, the positive sign indicates that the nominal crystal plane of the sample is convex relative to the test surface, and the negative sign indicates that the sample nominal The crystal planes are concave with respect to the test surface. Note 2.The crystal plane curvature is the reciprocal of the crystal plane curvature radius. 3.3 Incident angle ω angle ω angle The angle between the incident X-ray of the X-ray diffractometer and the surface of the sample stage. 3.4 rocking curve The detector position of the diffractometer is fixed, the ω angle is changed continuously and the measurement curve obtained by recording the diffraction intensity.4 Principles of the method4.1 The atoms of a single crystal are arranged in a three-dimensional periodic structure, and the crystal can be regarded as a series of parallel atomic planes with a vertical distance d. constitute. When a beam of parallel monochromatic X-rays is incident on the plane, if the angle θ between the incident light and the atomic plane, the X-ray wavelength λ, the crystal plane ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 41751-2022_English be delivered?Answer: Upon your order, we will start to translate GB/T 41751-2022_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 41751-2022_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 41751-2022_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. 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