GB/T 39343-2020 English PDF

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GB/T 39343-2020: Processor device single event effects experiment design and procedure for aerospace
Status: Valid

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GB/T 39343-2020	409	Add to Cart	4 days	Processor device single event effects experiment design and procedure for aerospace	Valid

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Basic data

Standard ID: GB/T 39343-2020 (GB/T39343-2020)
Description (Translated English): Processor device single event effects experiment design and procedure for aerospace
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: V25
Classification of International Standard: 49.035
Word Count Estimation: 22,277
Date of Issue: 2020-11-19
Date of Implementation: 2021-06-01
Regulation (derived from): National Standard Announcement No. 26 of 2020
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 39343-2020: Processor device single event effects experiment design and procedure for aerospace

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
(Design and program of single event experiment for aerospace processor device) ICS 49:035 V25 National Standards of People's Republic of China Design and program of single event test for aerospace processor device 2020-11-19 released 2021-06-01 implementation State Administration for Market Regulation Issued by the National Standardization Management Committee

Table of contents

Foreword Ⅰ 1 Scope 1 2 Normative references 1 3 Terms and definitions, abbreviations 1 3:1 Terms and definitions 1 3:2 Abbreviations 2 4 General requirements 2 4:1 Test environment 2 4:2 Test sample 3 4:3 Basic Principle 3 4:4 Demand analysis 4 4:5 Test preparation 4 5 Experimental design 5 5:1 Hardware Design 5 5:1:1 Overview 5 5:2 Software Architecture 7 5:3 Software Design 7 6 Test process 11 6:1 Test procedure 11 6:2 Precautions 12 6:3 Test judgment 12 6:4 Test interruption 13 6:5 Test failure criterion 13 6:6 Troubleshooting 13 6:7 Test safety 13 7 Processing of test results 13 7:1 Test data record 13 7:2 Test data analysis 14 7:3 Test report 14 Appendix A (informative appendix) Test site 16 Appendix B (Informative Appendix) Single Event Test Report Format for Aerospace Processor Devices 18

Foreword

This standard was drafted in accordance with the rules given in GB/T 1:1-2009: Please note that certain contents of this document may involve patents: The issuing agency of this document is not responsible for identifying these patents: This standard was proposed and managed by the National Aerospace Technology and Application Standardization Technical Committee (SAC/TC425): This standard was drafted by the 771th Research Institute of the Ninth Research Institute of China Aerospace Science and Technology Corporation: The main drafters of this standard: Zhang Qun, Liu Hongwei, Ma Zhenhua, Li Chun: Design and program of single event test for aerospace processor device

1 Scope

This standard specifies the design and procedures of single-event tests for aerospace processor devices: This standard applies to the design and process control of single-event experiments for aerospace processor devices, and can be implemented by reference to other applications:

2 Normative references

The following documents are indispensable for the application of this document: For dated reference documents, only the dated version applies to this article Pieces: For undated references, the latest version (including all amendments) applies to this document: GB 18871-2002 Basic standard for ionizing radiation protection and radiation source safety 3 Terms and definitions, abbreviations 3:1 Terms and definitions The following terms and definitions apply to this document: 3:1:1 Processordevice A device containing a processor inside can be a device that refers and executes instructions in normal use: 3:1:2 Single event effects; SEE A term describing many effects in a single event event: 3:1:3 Single event phenomenon; SEP The collective term for a series of responses of semiconductor devices triggered by the impact of a single high-energy particle, including effects caused by neutrons and protons: 3:1:4 Single Event Upset; SEU A single high-energy particle acts on the device to cause a radiation effect to change the logic state of the device: 3:1:5 Single event latchup; SEL A single high-energy particle triggers the thyristor in the device to turn on, forming a low resistance and high current state: 3:1:6 Single event functional interrupt; SEFI A single high-energy particle acts on the device, causing the device under test to lose or disrupt its function: Only by resetting and reconfiguration can the device be restored Features: 3:1:7 Linear energy transfer linear energy transfer; LET The energy deposited per unit length in the material along the incident direction: ......

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