GB/T 35316-2017 English PDFUS$439.00 ยท In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 35316-2017: Collection of metallographs on defects of sapphire crystal Status: Valid
Basic dataStandard ID: GB/T 35316-2017 (GB/T35316-2017)Description (Translated English): Collection of metallographs on defects of sapphire crystal Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H80 Classification of International Standard: 29.045 Word Count Estimation: 22,251 Date of Issue: 2017-12-29 Date of Implementation: 2018-07-01 Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China GB/T 35316-2017: Collection of metallographs on defects of sapphire crystal---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.Collection of metallographs on defects of sapphire crystal ICS 29.045 H80 National Standards of People's Republic of China Sapphire crystal defect map Published on.2017-12-29 2018-07-01 Implementation General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China China National Standardization Administration released ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standard Technical Subcommittee on Materials Technical Subcommittee (SAC/TC203/SC2) is jointly proposed and managed. Drafting organizations of this standard. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai Daheng Optical Precision Machinery Co., Ltd., China Institute of Physical and Chemical Technology of Xinjiang Academy of Sciences, Xinjiang Amethyst Photoelectric Technology Co., Ltd., Nonferrous Metals Technology and Economic Research Institute, Jiangsu Haolan Lanbao Stone Technology Co., Ltd., Suzhou Hengjia Crystal Material Co., Ltd., Jiangsu Jixing New Material Co., Ltd., Dongguan Zhongye Semiconductor Technology Co., Ltd. Company, Tianjin Sanan Optoelectronics Co., Ltd., Jiangxi Donghai Lanyu Optoelectronics Technology Co., Ltd., Dandong New Oriental Crystal Instrument Co., Ltd. The main drafters of this standard. Xu Min, Hang Yin, Pan Shilie, Zhang Fangfang, Zhao Xingyi, Wei Jian, He Dongjiang, Wu Chengrong, Cai Jinrong, Xu Yongliang, Ding Xiaomin, Wang Yuxiang, Li Guoping, Zhao Songbin, and Yang Suxin. Sapphire crystal defect map1 ScopeThis standard specifies the terms and definitions of sapphire crystal defects, morphology characteristics and causes. This standard applies to the inspection and analysis of various defects in the preparation of sapphire single crystal materials.2 Normative referencesThe following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 8756 crystal defect map GB/T 14264 Semiconductor Material Terms GB/T 30453 silicon raw material defect map3 Terms and DefinitionsThe terms and definitions defined in GB/T 8756, GB/T 14264 and GB/T 30453 apply to this document.4 Sapphire crystal defects4.1 Ingot Defects 4.1.1 crack 4.1.1.1 Morphological features The grown sapphire crystal is sometimes complete in shape, but several cracks can be observed inside or at the edge of the crystal. In severe cases, the crystals can be seen as fragmented. Piece. Examples of its topography are shown in Figures 1 through 4. 4.1.1.2 Cause When the crystal is grown or annealed, the thermal field is unreasonable, and the temperature in the furnace changes too quickly, causing thermal stress in the crystal to cause excessive cracking; The formation of external crushing stress in the crucible causes micro-cracks at the side walls of the crystal; when seedless crystal growth occurs or there are too many impurities in the raw material, it is easy to produce localized cracks. Polycrystalline, leading to crystal cracking. 4.1.2 Devitrification (opaque) 4.1.2.1 Morphological Features The sapphire crystals grown are translucent or opaque and mostly blackish. An example of its topography is shown in Figure 5. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 35316-2017_English be delivered?Answer: Upon your order, we will start to translate GB/T 35316-2017_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 35316-2017_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 35316-2017_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countriesQuestion 4: Do you accept my currency other than USD?Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay. |
