GB/T 35009-2018 English PDF

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GB/T 35009-2018: Specification for serial NAND flash interface
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 35009-2018	599	Add to Cart	5 days	Specification for serial NAND flash interface	Valid

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Basic data

Standard ID: GB/T 35009-2018 (GB/T35009-2018)
Description (Translated English): Specification for serial NAND flash interface
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L56
Classification of International Standard: 31.200
Word Count Estimation: 30,31
Date of Issue: 2018-03-15
Date of Implementation: 2018-08-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 35009-2018: Specification for serial NAND flash interface

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Specification for serial NAND flash interface ICS 31.200 L56 National Standards of People's Republic of China Serial NAND Flash Memory Interface Specification Published by.2018-03-15 2018-08-01 Implementation General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China China National Standardization Administration released Directory Preface III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Physical Interface 1 4.1 Terminal Function Definition 1 4.2 Data Interface Type 2 5 Storage Array Architecture 3 5.1 Storage Architecture 3 5.2 Status Register 4 5.3 Device Protection Functions 5 5.4 Device Self-destruction Function 6 6 Instruction Definition 7 6.1 Instruction Set Description 7 6.2 Instruction Set Description 8 6.3 Instruction Format Mode 19 7 Parameter Table Description 20 7.1 Parameter Header Definition 20 7.2 Parameter List Definition 20 Appendix A (Informative) Block Protection (BP) Method 25

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. Please note that some of the contents of this document may involve patents. The issuing agency of this document does not assume responsibility for identifying these patents. This standard was proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This standard is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This standard was drafted by. Beijing Zhaoyi Innovation Technology Co., Ltd., the Ministry of Industry and Information Technology Electronic Industry Standardization Institute, Shenzhen Zhongxing Microelectronics Technology Co., Ltd., China National Aerospace Science and Technology Corporation Research Institute No. 772, Institute of Microelectronics, Tsinghua University Research Institute, Ankai (Guangzhou) Microelectronics Technology Co., Ltd. The main drafters of this standard. Su Zhiqiang, Liu Chao, Liu Huijuan, Gao Shuo, Luo Xiaoyu, Wu Peng, Lin Jianjing, Wu Huaqiang, Zou Tianxiang. Serial NAND Flash Memory Interface Specification

1 Scope

This standard specifies the physical interface, memory array architecture, and instructions for serial and NAND flash memory (hereafter referred to as devices). Meaning and parameter table descriptions, etc. This standard applies to the design and use of serial NAND flash memory.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article Pieces. For undated references, the latest version (including all amendments) applies to this document. GB/T 17574-1998 Semiconductor device integrated circuit Part 2. Digital integrated circuits

3 Terms and definitions

The terms and definitions defined in GB/T 17574-1998 and the following terms apply to this document. 3.1 Status register status register Internal register of internal memory register. 3.2 One-time programmable one-timeprogrammable; OTP Only one memory area can be programmed in the memory. Once this area is programmed once, it cannot be modified again. 3.3 Error correction code errorcorrectioncode;ECC An error correction method that can improve the reliability of a flash memory.

4 physical interface

4.1 Terminal Function Definition The definition of the device's terminal functions is shown in Table 1. Table 1 Terminal Function Definition Terminal input/output function definition CS ......

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