GB/T 34210-2017 English PDF

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GB/T 34210-2017: Test method for determining the orientation of sapphire single crystal
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 34210-2017	119	Add to Cart	3 days	Test method for determining the orientation of sapphire single crystal	Valid

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Basic data

Standard ID: GB/T 34210-2017 (GB/T34210-2017)
Description (Translated English): Test method for determining the orientation of sapphire single crystal
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 6,655
Date of Issue: 2017-09-07
Date of Implementation: 2018-06-01
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

GB/T 34210-2017: Test method for determining the orientation of sapphire single crystal

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for determining the orientation of sapphire single crystal ICS 77.040 H21 National Standards of People's Republic of China Sapphire crystal single crystal orientation method 2017-09-07 Posted 2018-06-01 implementation General Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China China National Standardization Administration released

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards Technical Committee Materials Branch (SAC/TC203/SC2) co-sponsored and centralized. This standard was drafted unit. Chinese Academy of Sciences Shanghai Institute of Optics and Fine Mechanics, Dandong New Oriental Crystal Instrument Co., Ltd., Shenzhen Zhong An measured Standard Technology Co., Ltd., Dongguan Huayuan Optoelectronics Technology Co., Ltd. The main drafters of this standard. Hang Yin, Zhen Wei, Yin Jigang, Zhao Songbin, Hong Jiaqi, Zhang Lianhan, Zhang Yi, Wei Wei. Sapphire crystal single crystal orientation method

1 Scope

This standard specifies the use of X-ray orienting apparatus to determine the sapphire crystal orientation. This standard applies to the determination of sapphire crystal orientation parallel to the low index crystal plane.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1555 semiconductor crystal orientation measurement method GB/T 14264 semiconductor materials terminology JB/T 5482 X-ray crystal orientation instrument

3 Terms and definitions

GB/T 1555, GB/T 14264 and JB/T 5482 defined terms and definitions apply to this document.

4 method principle

The crystal orientation is determined based on the X-ray diffraction principle. Single crystal is composed of three-dimensional periodic structure of atoms, can be seen as Is a series of parallel planes formed by a vertical distance d of the atomic arrangement space when a bundle of parallel monochromatic X-rays is incident upon the plane and Diffraction (reflection) occurs when the X-ray is irradiated with an optical path difference between adjacent crystal planes that is an integer multiple of its wavelength, that is, n times. Use counters to explore Measured diffraction line, according to its location to determine the crystal orientation of single crystal, shown in Figure 1. Figure 1 X-ray irradiation onto a single crystal plane geometric reflection conditions When the angle θ between the incident beam and the reflecting crystal plane, the X-ray wavelength λ, the interplanar distance d and the diffraction order n satisfy the following Bragg The law (1), X-ray diffraction beam intensity will reach the maximum. nλ = 2dsinθ (1) For the hexagonal system, the spacing d according to equation (2). ......

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