GB/T 31351-2014 English PDF

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GB/T 31351-2014: Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 31351-2014	169	Add to Cart	3 days	Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers	Valid

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Basic data

Standard ID: GB/T 31351-2014 (GB/T31351-2014)
Description (Translated English): Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H26
Classification of International Standard: 77.040.99
Word Count Estimation: 7,755
Date of Issue: 12/31/2014
Date of Implementation: 9/1/2015
Regulation (derived from): National Standards Bulletin 2014 No. 33
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This Standard specifies the NDT methods 4H and 6H crystal silicon carbide single crystal polished crystal emblem tube density. This Standard applies to 4H and 6H crystal silicon carbide single crystal polished microtubule density measured by the radial di

GB/T 31351-2014: Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers ICS 77.040.99 H26 National Standards of People's Republic of China Silicon carbide single crystal polished microtubule density NDT method Nondestructive test method for micropipe density of polished monocrystaline silicon carbide wafers Issued on. 2014-12-31 2015-09-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. Please note that some of the content of this document may involve patents. Release mechanism of the present document does not assume responsibility for the identification of these patents. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and National Semiconductor Equipment and Materials Standards Materials Branch of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Beijing Branch of days of blue Semiconductor Co., Ltd., Chinese Academy of Sciences Institute of Physics. The main drafters of this standard. Chen Xiaolong, Zheng Hongjun, Zhang Wei, Guo Yu, Liu Zhenzhou. Silicon carbide single crystal polished microtubule density NDT method

1 Scope

This standard specifies the NDT methods 4H and 6H polymorph crystalline silicon carbide single crystal polished microtubule density. This standard applies to polymorph 4H and 6H-type silicon carbide single crystal polished by single-sided or double-sided polishing after polishing, microtubule radial dimension Microtubule density measurements within a micron to several tens of microns.

2 Terms and definitions

The following terms and definitions apply to this document. 2.1 Microtubules micropipe 4H or 6H silicon carbide single crystal polished in the c-axis direction and extends in the radial dimension of the hollow conduit in a range of micrometers to tens of micrometers. 2.2 Microtubule density micropipedensity Microtubule number per unit area, referred to as the MPD, in units of per square centimeter (number/cm2).

3 PRINCIPLE OF THE METHOD

The use of incident light in the refractive index difference at around microtubules microtubule determined to calculate the corresponding density of microtubules. Test System First light through the polarizing plate P1 (polarizer), natural light becomes the light changes with a certain vibration direction; if the lattice arrangement of the sample were Uniform, i.e. the same refractive index, the light through the sample is still in the same vibration direction of light; Thus, the polarized light through 90 ° to the sheet P1 P2 (Analyzer), the light intensity of the detector signal obtained will be homogeneous. If the sample exists somewhere microtubules, the hollow interior of the tube of silicon carbide micro and week There is a certain stress field around its corresponding refractive index is inconsistent, the light through the sample in the direction of vibration near the microtubules no longer with the overall level OK, the light intensity signal detector results obtained will reflect the corresponding difference. Diagram shown in Figure 1. Figure 1 Schematic microtubules NDT When the surface of the sample parallel to the (0001) plane, microtubules appear as butterfly-shaped bright spot; when departing from the surface of the sample (0001) plane, the microtubules was Shown as a comet-like, this difference in signal intensity indicates the presence of microtubules. Orthogonal polarization microscope in transmitted light mode 50X ~ 100 times the typical morphology observed when the wafer is cut perpendicular to the c axis, microtubule is butterfly-shaped, as shown in Figure 2a) as shown; when the cutting direction When the presence of c-axis angle, the morphology of microtubules is comet-shaped, as shown in Figure 2b) below. ......

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