GB/T 30869-2014 English PDF

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GB/T 30869-2014: Test method for thickness and total thickness variation of silicon wafers for solar cell
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 30869-2014	189	Add to Cart	3 days	Test method for thickness and total thickness variation of silicon wafers for solar cell	Valid

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Basic data

Standard ID: GB/T 30869-2014 (GB/T30869-2014)
Description (Translated English): Test method for thickness and total thickness variation of silicon wafers for solar cell
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 8,832
Date of Issue: 7/24/2014
Date of Implementation: 2/1/2015
Quoted Standard: GB/T 26071; GB/T 29055
Regulation (derived from): National Standards Bulletin No. 19, 2014
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the discrete scanning and measuring solar cell wafers (hereinafter referred to as wafer) changes in thickness and total thickness. This standard applies to GB /T 26071, GB /T 29055 regulations Measurements of wafer thickness and to

GB/T 30869-2014: Test method for thickness and total thickness variation of silicon wafers for solar cell

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test method for thickness and total thickness variation of silicon wafers for solar cell ICS 77.040 H21 National Standards of People's Republic of China Solar cell wafer thickness and total thickness variation Test Methods Issued on. 2014-07-24 2015-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and materials Technical Committee (SAC/TC 203/SC2) jointly proposed and managed. This standard was drafted. Dongfang Electric Group, Emei Semiconductor Material Co., Ltd. has semiconductor materials research, Leshan new Tianyuan Solar Technology Co., Ltd. Green Yang Electronic Materials. The main drafters of this standard. Hezi Jun, Feng straightened, Cheng Yu, Li Yang, Chen Lin, Jingxu Hua, Zhuo. Solar cell wafer thickness and total thickness variation Test Methods

1 Scope

This standard specifies the discrete scanning and measuring solar cell wafers (hereinafter referred to as wafer) changes in thickness and total thickness. This standard applies to GB T 26071 GB/T 29055 predetermined size to measure the thickness and total thickness variation of /, silicon, division Measurement method is suitable for contact and non-contact measurement, scanning measurement method is only applicable to non-contact measurement. Measuring instruments permit Under the circumstances, the present standard can also be used to measure the thickness and other specifications total wafer thickness variations.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 26071 monocrystalline silicon solar cells with a cutting disc GB/T 29055 multicrystalline silicon wafers for solar cells

3 Method summary

3.1 discrete point measurement On a silicon wafer and diagonal intersection diagonal from point symmetrical positions on both sides of four 15mm measuring wafer thickness (see Figure 1). Silicon wafer Center point thickness as the nominal thickness of the silicon wafer. The difference between the total thickness of 5 thickness measurements of the maximum and minimum thicknesses of the wafer is called Variety. Figure 1 discrete point measurement point position measurement 3.2 Scanning measurement Placed on a silicon chip platform, in the center of wafer thickness measurements, measuring the value of the nominal thickness of the silicon wafer, and then from a point of 1 to 7 ......

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