GB/T 30453-2013 English PDF

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GB/T 30453-2013: Metallographs collection for original defects of crystalline silicon
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 30453-2013	1859	Add to Cart	13 days	Metallographs collection for original defects of crystalline silicon	Valid

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GB/T 12963   GB/T 29055   GB/T 16596   GB/T 14264   GB/T 43612   GB/T 29057   

Basic data

Standard ID: GB/T 30453-2013 (GB/T30453-2013)
Description (Translated English): Metallographs collection for original defects of crystalline silicon
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 84,86
Quoted Standard: GB/T 1554; GB/T 4058; GB/T 14264
Regulation (derived from): National Standards Bulletin 2013 No. 27
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard provides a variety of native defects and induced defects are closely related terms and their morphology map polycrystalline silicon, monocrystalline silicon, wafers and epitaxial silicon wafers and other silicon materials. Analysis of its ca

GB/T 30453-2013: Metallographs collection for original defects of crystalline silicon

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Metallographs collection for original defects of crystalline silicon ICS 29.045 H80 National Standards of People's Republic of China Native silicon material defect map Issued on. 2013-12-31 2014-10-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Table of Contents

Introduction Ⅲ 1 Scope 1 2 Normative references 1 3 Terms and definitions Incompleteness polycrystalline silicon structure 4 1 5 silicon single crystal defects 4 6 9 silicon processing defects 7 silicon wafer defect 11 Appendix A (informative) hydrogen-induced defects 76 Index 79

Foreword

This standard was drafted in accordance with the rules of GB/T 1.1-2009 making. This standard by National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch (SAC/TC203/SC2) and focal points. This standard was drafted. Grinm Semiconductor Materials Co., Ltd., Dongfang Electric Group Emei Semiconductor Materials Co., Ltd., Nanjing State Sheng Electronics Co., Ltd., Hangzhou Haina Semiconductor Co., universal silicon peak Electronics Co., Ltd., Sichuan Xinguang Silicon Technology Co., Ltd. The company, Shaanxi Tianhong Silicon Material Co., Ltd., China Nonferrous Metals Industry Standards and Metrology Institute for Quality. The main drafters of this standard. Sun Yan, Cao Zi, Difu Yi, Yang, Tan Weidong, Huang Xiaorong, Chunlan floor, Wangfei Yao, Shi Yu, Liuyun Xia, Chen He, Liang Hong, Luo Liping, Yongmei, Qibu Kun, Li Hui, to Lei. Native silicon material defect map

1 Scope

This standard gives a variety of native defects in polycrystalline silicon, monocrystalline silicon, wafers and epitaxial silicon wafers and other silicon materials and their closely related induced defects Terms and morphology patterns. Analysis of its causes and elimination methods. This standard applies to testing the production of polycrystalline silicon research, monocrystalline silicon, silicon and epitaxial silicon wafers and other silicon materials in a variety of defects. Silicon devices, set Research into the production circuit may also refer to this standard.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 1554 crystallographic perfection of silicon by preferential etch test methods GB/T 4058 Test Method polished silicon oxide induced defects GB/T 14264 semiconductor material terms

3 Terms and Definitions

Terms and definitions GB/T 14264 apply to this document defined. Incompleteness polycrystalline silicon structure 4 4.1 coarse grains 4.1.1 Characteristics The trichlorosilane (SiHCl3) or silicon tetrachloride (SiCl4) and hydrogen reduction of silane (SiH4) thermal decomposition grown polycrystalline silicon, dense surface And crystallite size, and qualified polycrystalline significant differences (see Fig. 1 to 4). 4.1.2 Causes When the deposition of polycrystalline growth rate too fast, high temperature, easy to produce coarse particles. 4.1.3 The Effect of Single Crystal Ago to the cleaning process for preparing a single crystal grain material difficult, and become sources of impurities in a single crystal. 4.1.4 Elimination Reasonable control of the deposition rate, the ratio of the feed control, adjust the gas flow rate. 4.2 Temperature circle 4.2.1 Characteristics Under normal circumstances, the polycrystalline silicon grains form cross section or radial radiation dendritic growth (see Figure 5). But sometimes it can be observed in the silicon core ......

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