GB/T 29504-2013 English PDFUS$169.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 29504-2013: 300 mm monocrystalline silicon Status: Valid
Basic dataStandard ID: GB/T 29504-2013 (GB/T29504-2013)Description (Translated English): 300 mm monocrystalline silicon Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H82 Classification of International Standard: 29.045 Word Count Estimation: 7,783 Quoted Standard: GB/T 1550; GB/T 1551-2009; GB/T 1554; GB/T 1555; GB/T 1557; GB/T 1558; GB/T 11073-2007; GB/T 14140; GB/T 14264; YS/T 679 Regulation (derived from): National Standards Bulletin 2013 No. 6 Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies the diameter of 300mm, p -type, (100) crystal orientation, resistivity 0. 5�� �� cm ~ 20�� �� cmm silicon technical requirements, test methods, inspection rules and signs, packaging, transportation, storage and so on. This standard app GB/T 29504-2013: 300 mm monocrystalline silicon---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.300 mm monocrystalline silicon ICS 29.045 H82 National Standards of People's Republic of China 300mm silicon single crystal Issued on. 2013-05-09 2014-02-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released ForewordThis standard was drafted in accordance with GB/T 1.1-2009 given rules. The standard equipment by the National Standardization Technical Committee and the semiconductor material (SAC/TC203) and focal points. This standard was drafted. Grinm Semiconductor Materials Co., Ltd., China Nonferrous Metals Industry Standards and Metrology Institute for quality, universal silicon Feng Electronics Co., Ltd., Ningbo Lili Electronics Co., Ltd. The main drafters of this standard. Yan Zhi Rui, Sun Yan, Lu Liyan, Zhang Guo Hu, Lou Chunlan, Liupei Dong to Lei. 300mm silicon single crystal1 ScopeThis standard specifies the diameter of 300mm, p-type < 100> crystal orientation, resistivity of 0.5Ω · cm ~ 20Ω · cm silicon single crystal of technical requirements, Test methods, inspection rules and signs, packaging, transportation, storage and so on. This standard applies to a silicon single crystal by the Czochralski prepared mainly for the production of integrated circuits to meet with a line width of 0.13μm and below IC technology 300mm polished silicon single crystal needs surgery.2 Normative referencesThe following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 1550 extrinsic conductivity type semiconductor material testing methods GB/T 1551-2009 monocrystalline silicon resistivity measuring method GB/T 1554 crystallographic perfection of silicon by preferential etch test methods GB/T 1555 to the measurement method of a semiconductor single crystal GB/T 1557 interstitial oxygen content in the silicon crystal infrared absorption measurement method GB/T 1558 silicon substitutional atomic carbon content by infrared absorption method Methods of measurement GB/T 11073-2007 radial resistivity variation on silicon GB/T 14140 wafer diameter measuring method GB/T 14264 semiconductor material terms YS/T 679 unsteady surface photovoltage test method intrinsic semiconductor minority carrier diffusion length3 Terms and DefinitionsTerms and definitions GB/T 14264 apply to this document defined. 4. Technical Requirements 4.1 diameter After a silicon single crystal diameter rounded to 301mm, tolerance ± 0.3mm. Other user requirements and not rounded silicon single crystal diameter and allow Xu deviation agreed by both parties. 4.2 Resistivity 4.2.1 resistivity silicon single crystal and radial resistivity change should meet the requirements in Table 1. Table 1 monocrystalline silicon electrical parameters Item conductive type dopant element Resistivity Ω · cm Radial resistivity change Index p boron 0.5 ~ 20 ≤10 ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 29504-2013_English be delivered?Answer: Upon your order, we will start to translate GB/T 29504-2013_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 29504-2013_English with my colleagues?Answer: Yes. 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