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GB/T 29195-2012 English PDF

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GB/T 29195-2012: General specification of crystalline silicon terrestrial solar cells
Status: Valid
Standard IDUSDBUY PDFLead-DaysStandard Title (Description)Status
GB/T 29195-2012299 Add to Cart 3 days General specification of crystalline silicon terrestrial solar cells Valid

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Basic data

Standard ID: GB/T 29195-2012 (GB/T29195-2012)
Description (Translated English): General specification of crystalline silicon terrestrial solar cells
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: K83
Classification of International Standard: 27.160
Word Count Estimation: 13,197
Quoted Standard: GB/T 191; GB/T 2828.1-2003; GB/T 2829; GB/T 6495.1-1996; GB/T 6495.3-1996; GB/T 6618; GB/T 17473.7-2008; IEC 60891; ASTM D3359; SEMI PV22
Regulation (derived from): National Standards Bulletin No. 41 of 2012
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the terrestrial crystalline silicon solar cell technology requirements, test methods, inspection rules, marking, packaging, storage and transportation. This standard applies to the ground floor with a silicon solar cells and polycr

GB/T 29195-2012: General specification of crystalline silicon terrestrial solar cells

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
General specification of crystalline silicon terrestrial solar cells ICS 27.160 K83 National Standards of People's Republic of China Crystalline silicon solar cells with a total floor specification Issued on. 2012-12-31 2013-06-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard was drafted in accordance with GB/T 1.1-2009 given rules. Please note that some of the content of this document may involve patents. Distribution of this document Institutions do not assume the responsibility to identify these patents. This standard by the National Standardization Technical Committee of solar photovoltaic energy systems (SAC/TC90) and focal points. This standard was drafted. Suntech Power Co., Ltd. The main drafters of this standard. Li Hua, Chen Rulong, Wang Yichuan, Liang Zhe, Yang Lin, Zhang Guangchun, Shi. Crystalline silicon solar cells with a total floor specification

1 Scope

This standard specifies the terrestrial crystalline silicon solar cell technology requirements, test methods, inspection rules, marking, packaging, storage and transportation. This standard applies to single-crystal silicon solar cells and the ground floor with a polycrystalline silicon solar cells (hereinafter referred to as a battery).

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. GB/T 191 Packaging - Pictorial signs (GB/T 191-2008, ISO 780.1997, MOD) GB/T 2828.1-2003 Sampling procedures for inspection - Part 1. by acceptance quality limit (AQL) retrieval batch test sample Programme (ISO 2859-1.1999, IDT) GB/T 2829 periodic inspection Sampling procedures and tables (suitable for process stability test) GB/T 6495.1-1996 Part 1 photovoltaic devices. photovoltaic current - voltage characteristics (idt IEC 60904-1. 1987) GB/T 6495.3-1996 Photovoltaic devices - Part 3. Ground spectral irradiance data measurement principle and standard photovoltaic devices (Idt IEC 60904-3. 1989) GB/T 6618 wafer thickness and total thickness variation of test methods GB/T 17473.7-2008 microelectronics precious metal pastes used test methods weldability, resistance to soldering Determination Temperature and irradiance corrections (Photovoltaicdevices Ⅰ-Ⅴ characteristics IEC 60891 Found crystalline silicon photovoltaic devices ProceduresfortemperatureandirradiancecorrectionstomeasuredⅠ-Ⅴcharacteristics) Methods ASTMD3359 tape test measures the adhesion (Standardtestmethodsformeasuringadhesionby tapetest) SEMIPV22 solar wafers Specification (Specificationforsiliconwafersforuseinphotovoltaicsolar cels)

3 Terms and Definitions

The following terms and definitions apply to this document. 3.1 Blunt notch obtusenick Notch shape is presented along the edges smooth transition, not to deep center status. 3.2 V-notch V-typenick Central notch shape which presents a sharp shape depth, like a letter "V". 3.3 Matrix material substrate Comply with the requirements SEMIPV22 monocrystalline or polycrystalline Si wafer.
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