GB/T 26071-2018 English PDF

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GB/T 26071-2018: Monocrystalline silicon wafers for solar cells
Status: Valid

GB/T 26071: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 26071-2018	199	Add to Cart	3 days	Monocrystalline silicon wafers for solar cells	Valid
GB/T 26071-2010	399	Add to Cart	3 days	Mono-crystalline silicon as cut slices for photovoltaic solar cells	Obsolete

Similar standards

GB/T 12963   GB/T 29055   GB/T 25074   GB/T 26069   GB/T 26072   

Basic data

Standard ID: GB/T 26071-2018 (GB/T26071-2018)
Description (Translated English): Monocrystalline silicon wafers for solar cells
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H82
Classification of International Standard: 29.045
Word Count Estimation: 10,118
Date of Issue: 2018-09-17
Date of Implementation: 2019-06-01
Older Standard (superseded by this standard): GB/T 26071-2010
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 26071-2018: Monocrystalline silicon wafers for solar cells

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Monocrystalline silicon wafers for solar cells ICS 29.045 H82 National Standards of People's Republic of China Replace GB/T 26071-2010 Silicon wafer for solar cells Published on.2018-09-17 2019-06-01 implementation State Market Supervisory Administration China National Standardization Administration issued

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 26071-2010 "Silicon single crystal cutting sheet for solar cells". Compared with GB/T 26071-2010, mainly The technical changes are as follows. --- Change the standard name "Silicon Single Crystal Cutting Sheet for Solar Cells" to "Silicon Single Chip for Solar Cells" (see cover,.2010) Cover of the edition); --- Revised the description of the applicability of this standard in the scope (see Chapter 1, Chapter 1 of the.2010 edition); --- Revised the reference standard for resistivity measurement, GB/T 1551 replaced GB/T 1552 (see Chapter 2, Chapter 2 of the.2010 edition); --- Increase the reference standards GB/T 6619, GB/T 14844, GB/T 30859, GB/T 30860, GB/T 30869 and YS/T 28 (See Chapter 2, Chapter 2 of the.2010 edition); --- Removed the definition of line marks (see.2010 edition 3.1); --- Increased representation of product grades (see 4.1); --- In the product classification, "can be divided into two types according to the shape can be divided into quasi-square and round" to "can be divided into quasi-square and square according to the shape", The circular classification and its requirements have been removed from the standard, and the square has been added (see 4.2.2, 4.1 of the.2010 edition); ---The product size is modified from "quasi-square silicon wafer according to its side length of 125mm × 125mm, 156mm × 156mm" The silicon wafer is divided into 100.75mm, 125.75mm, 156I, 156II, 156III, 161.75mm, 210.75mm according to its side length (see 4.2.2, version 4.2 of the.2010 edition; --- Removed the size of the circular silicon wafer, adding "square silicon wafer can be divided into 100.75 mm, 125.75 mm according to its size, 156.75mm, 210.75mm" requirements (see 4.2.2, 4.2 edition of.2010); --- Increased physical and chemical properties, that is, "the crystal integrity, oxygen content and carbon content of the silicon wafer should meet the requirements of GB/T 25076. If necessary, the supplier shall provide the results of the inspections” (see 5.1); --- Increased the corresponding thickness of the silicon wafer "130 ± 15, 140 ± 15, 150 ± 15, 170 ± 20"; removed the thickness of the silicon wafer "220 ± 20, 240 ± 20" corresponding requirements; revised the warpage index requirements (see 5.2.1, 4.3.1 of the.2010 edition); --- Revised the requirements for the size of the quasi-square wafer (see 5.2.2, 4.3.2 of the.2010 edition); --- Increased the size of the square silicon wafer (see 5.2.3); --- Removed "the conductivity type, dopant, minority carrier lifetime and crystal integrity of the silicon wafer should meet the requirements of GB/T 25076" (see 4.3.3.1 of the.2010 edition); --- The lower limit of the resistivity range in the electrical performance parameters is changed from 0.5 Ω·cm to P-type 0.2 Ω·cm, N-type 0.1 Ω·cm (see 5.3.2, 4.3.3.2 of the.2010 edition; --- Modified the requirements for crystal orientation deviation (see 5.4, 4.3.4 of the.2010 edition); --- Revised the requirements for the depth, chipping and gap of the silicon trace (see 5.5, 4.3.5 of the.2010 edition); --- Revised the inspection level of conductivity type and crystal orientation (see Table 6, Table 6 of.2010 edition). This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards. The Technical Subcommittee of the Technical Committee (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Zhejiang Silicon Materials Quality Inspection Center, Yanyan Semiconductor Materials Co., Ltd., Taizhou Longji Leye Photovoltaic Technology Co., Ltd., Suzhou GCL Solar Technology Co., Ltd., Longji Green Energy Technology Co., Ltd., Inner Mongolia Zhonghuan Photovoltaic Materials Co., Ltd. Changnan Glass Silicon Material Co., Ltd., Nonferrous Metals Technology and Economic Research Institute. The main drafters of this standard. Lou Chunlan, Mao Weizhong, Zou Jianqiu, Wang Xinhua, Sun Yan, Yang Suxin, Liu Peidong, Gong Longfei, Deng Hao, Li Jianhong, Xu Bo, Xu Guohua, Zhang Jun. The previous versions of the standards replaced by this standard are. ---GB/T 26071-2010. Silicon wafer for solar cells

1 Scope

This standard specifies the grades and classifications, requirements, test methods, inspection rules, signs, and silicon wafers for solar cells (referred to as silicon wafers). Packaging, transportation, storage, quality certificate and order form (or contract) content. This standard is applicable to quasi-square or square silicon wafers processed by silicon single crystals prepared by the Czochralski method. The products are used for the lining of solar cells. Negative film.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1551 silicon single crystal resistivity determination method GB/T 1555 semiconductor single crystal orientation determination method GB/T 2828.1-2012.Sampling procedures for sampling by sampling - Part 1 . Batch-by-batch inspections by Retrieving Quality of Acceptance (AQL) plan GB/T 6616 Semiconductor silicon wafer resistivity and silicon film sheet resistance test method Non-contact eddy current method GB/T 6618 silicon wafer thickness and total thickness variation test method GB/T 6619 silicon wafer bending test method GB/T 6620 silicon wafer warpage non-contact test method GB/T 11073 Silicon wafer radial resistivity change measurement method GB/T 14140 silicon wafer diameter measurement method GB/T 14264 semiconductor material terminology GB/T 14844 semiconductor material grade representation GB/T 25076 silicon single crystal for solar cells Non-contact microwave reflection photoconductivity attenuation test method for GB/T 26068 silicon carrier carrier composite lifetime GB/T 30859 Silicon wafer warpage and waviness test method for solar cells GB/T 30860 solar cell wafer surface roughness and cutting line mark test method GB/T 30869 Test method for thickness and total thickness of silicon wafers for solar cells YS/T 28 wafer packaging

3 Terms and definitions

The terms and definitions defined in GB/T 14264 apply to this document.

4 classification

4.1 Brand The representation of the silicon grade is carried out in accordance with the provisions of GB/T 14844. ......

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