GB/T 26068-2018 English PDFUS$599.00 · In stock
Delivery: <= 5 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 26068-2018: Test method for carrier recombination lifetime in silicon wafers and silicon ingots -- Non-contact measurement of photoconductivity decay by microwave reflectance method Status: Valid GB/T 26068: Historical versions
Basic dataStandard ID: GB/T 26068-2018 (GB/T26068-2018)Description (Translated English): Test method for carrier recombination lifetime in silicon wafers and silicon ingots -- Non-contact measurement of photoconductivity decay by microwave reflectance method Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H21 Classification of International Standard: 77.040 Word Count Estimation: 30,330 Date of Issue: 2018-12-28 Date of Implementation: 2019-11-01 Older Standard (superseded by this standard): GB/T 26068-2010 Regulation (derived from): National Standard Announcement No. 17 of 2018 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 26068-2018: Test method for carrier recombination lifetime in silicon wafers and silicon ingots -- Non-contact measurement of photoconductivity decay by microwave reflectance method---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Test method for carrier recombination lifetime in silicon wafers and silicon ingots--Non-contact measurement of photoconductivity decay by microwave reflectance method ICS 77.040 H21 National Standards of People's Republic of China Replace GB/T 26068-2010 Silicon wafer and silicon ingot carrier lifetime test Non-contact microwave reflection photoconductivity attenuation method Published on.2018-12-28 2019-11-01 implementation State market supervision and administration China National Standardization Administration issued ContentForeword III 1 Scope 1 2 Normative references 1 3 Terms and Definitions 1 4 Principle of the method 2 5 interference factors 2 6 instruments and equipment 4 7 reagent 6 8 sample 6 9 Test Step 7 10 precision 9 11 Test report 9 Appendix A (informative) Correction of injection level 10 Appendix B (informative appendix) Discussion on the level of injection 11 Appendix C (informative) The relationship between carrier lifetime and temperature 14 Appendix D (informative) Minority carrier composite life 17 Appendix E (informative) Further description of test body composite life, minority carrier lifetime and iron content 19 Appendix F (Informative) Test Method Purpose and Precision in SEMIMF1535-1015 23 Reference 24ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 26068-2010 "Test method for contactless microwave reflection photoconductivity attenuation of silicon wafer carrier lifetime". Compared with GB/T 26068-2010, this standard is subject to the following editorial changes. --- Change the standard name "Silicon carrier carrier lifetime lifetime non-contact microwave reflection photoconductivity attenuation test method" to "silicon wafer and silicon ingot Test of carrier recombination lifetime non-contact microwave reflection photoconductivity attenuation method; --- Increased the use of microwave reflection photoconductivity attenuation method to test the composite lifetime of single crystal silicon ingots and cast polycrystalline silicon wafers, silicon ingot carriers Rong (see Chapter 1, 9.2); --- Change the lower limit of the room temperature resistivity of the test sample in the range from "0.05 Ω · cm ~ 1 Ω · cm" to "0.05 Ω · cm ~ 10 Ω · Cm", the test range of carrier recombination life is changed from "0.25μs to >1ms" to " >0.1μs", and the.2010 version is deleted. 1.3 (see Chapter 1, 1.2, 1.3 of the.2010 edition); --- Added GB/T 1551 to the normative reference file, deleted GB/T 1552, SEMIMF1388, SEMIMF1530, deleted In addition to the age number in GB/T 1553-2009 and YS/T 679-2008, the number of GB/T 11446.1 was added to.2013. (See Chapter 2, Chapter 2 of the.2010 edition); --- Revised the definition of terminology injection level, composite life, surface recombination rate, body recombination life and 1/e life (see Chapter 3, Chapter 3 of the.2010 edition); --- Adjust some parts of the.2010 edition 1/e life definition to the interference factor 5.16, and the 1/e life definition is adjusted to the interference factor 5.13 (see 5.10, 5.17, 3.6 of the.2010 edition); --- Increased the "carrier diffusion length is less than 0.1 times the thickness of the silicon wafer, you can consider not processing the sample surface, direct detection", The surface treatment method adds “surface continuous corona charging” (see 5.1); --- Increased recommended test temperature and humidity, small signal conditions, carrier trap or depletion zone, test point distance edge distance test The impact of the test results (see 5.5, 5.6, 5.9, 5.18, 5.20); --- Adjust the 7.1 part of the.2010 edition to 5.19 (see 5.19, 7.1 of the.2010 edition); --- Added "the use of wavelength segments of thin films, thin layers, thin silicon wafers or other materials is subject to testing by relevant departments or organizations" (see 6.2); --- Added "If the thickness of the silicon wafer is less than 150μm, it is advisable to use a non-metallic wafer holder" (see 6.5); --- Modify the water requirements to "meet the requirements of EW-III or better in GB/T 11446.1-2013 (see 7.1,.2010 edition) 7.2); --- Clear the purity level of iodine, absolute ethanol, hydrofluoric acid, nitric acid (see 7.2, 7.3, 7.4, 7.5); --- Removed the content of the sampling (see 8.1 of the.2010 edition); ---Sample preparation adds "the need to remove residuals from the surface of the sample by mechanical and chemical mechanical polishing or by chemical polishing only After injury" (see 8.2); --- Defined the specific operation mode of silicon wafer oxidation treatment [see 8.2a),.2010 edition 8.4.1]; --- Surface preparation method for "continuous corona charging of silicon wafer surface" added to sample preparation [see 8.2c)]; --- Removed the corrosion time of the surface oxide of the sample with hydrofluoric acid before passivation (see.2010 edition) 8.4.2.1); ---In the silicon test step, add "If you need to record and use the status of the front and back in 9.1.1" and "Use the appropriate wavelength, Record the laser wavelength and pulse spot size used (see 9.1.3, 9.1.5); --- Revised precision according to the test conditions (see Chapter 10, Chapter 11 of the.2010 edition); --- Added informative Annex E and adjusted the.2010 version of Section 8.3 to Appendix E, E.3 (see Appendix E,.2010 edition 8.3). This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards. The Technical Subcommittee Materials Branch (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Yanyan Semiconductor Materials Co., Ltd., Sami Lebe Trading (Shanghai) Co., Ltd., China Institute of Metrology, Zhejiang Silicon Material Quality Inspection Center, Guangzhou Kunde Technology Co., Ltd., Jiangsu Xiexin Silicon Materials Technology Development Co., Ltd., Tianjin Ring Euro Semiconductor Materials Technology Co., Ltd., Beijing Heineng Sunshine New Energy Technology Co., Ltd. The main drafters of this standard. Cao Yu, Sun Yan, Huang Li, Zhao Hejing, Xu Hongyu, Gao Ying, Shi Yu, Lou Chunlan, Wang Wei, Zhang Xueyu, Lin Qingxiang, Liu Zhuo, Xiao Zongjie. The previous versions of the standards replaced by this standard are. ---GB/T 26068-2010. Silicon wafer and silicon ingot carrier lifetime test Non-contact microwave reflection photoconductivity attenuation method1 ScopeThis standard specifies the non-contact microwave reflection photoconductivity decay test for the carrier lifetime of single crystal and cast polycrystalline silicon wafers and silicon ingots. method. This standard applies to silicon ingots and polished n-type or p-type silicon wafers (when silicon wafer thickness is greater than 1mm, commonly referred to as silicon blocks) Test of carrier recombination lifetime. This standard can also be used for test cutting or research under the condition that the conductivity detection system has sufficient sensitivity. Carrier recombination lifetime of ground and corroded silicon wafers. Generally, the lower limit of the room temperature resistivity of the sample to be tested is 0.05 Ω·cm to 10 Ω·cm. Between, is determined by the limit of the sensitivity of the detection system. The test range of carrier recombination lifetime is greater than 0.1μs, and the shortest lifetime value that can be measured depends on The shutdown characteristic of the light source and the sampling frequency of the attenuation signal detector, the longest measurable value depends on the geometry of the sample and the passivation of the surface degree.2 Normative referencesThe following documents are indispensable for the application of this document. For dated references, only the dated version applies to this article. Pieces. For undated references, the latest edition (including all amendments) applies to this document. GB/T 1550 Test method for conductivity type of extrinsic semiconductor materials GB/T 1551 silicon single crystal resistivity determination method GB/T 1553 Determination of minority carrier lifetime in silicon and germanium GB/T 6616 Semiconductor silicon wafer resistivity and silicon film sheet resistance test method Non-contact eddy current method GB/T 6618 silicon wafer thickness and total thickness variation test method GB/T 11446.1-2013 electronic grade water GB/T 13389 boron-doped phosphorus-doped arsenic-doped silicon single crystal resistivity and dopant concentration conversion procedure GB/T 14264 semiconductor material terminology YS/T 679 Steady-state surface photovoltage test method for minority carrier diffusion length in extrinsic semiconductors SEMIMF978 Semiconductor Deep Level Transient Capacitance Test Method (Testmethodforcharacterizingsemiconductor Deeplevelsbytransientcapacitancetechniques)3 Terms and definitionsThe following terms and definitions as defined in GB/T 14264 apply to this document. 3.1 Injection level injectionlevel In an extrinsic semiconductor crystal or wafer, the concentration of excess carriers generated by photons or other means is balanced with the majority of carriers. Ratio of degrees. Note. The injection level is related to the initial excess carrier concentration that occurs immediately after the excitation pulse is stopped. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 26068-2018_English be delivered?Answer: Upon your order, we will start to translate GB/T 26068-2018_English as soon as possible, and keep you informed of the progress. The lead time is typically 3 ~ 5 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 26068-2018_English with my colleagues?Answer: Yes. The purchased PDF of GB/T 26068-2018_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.Question 3: Does the price include tax/VAT?Answer: Yes. 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