GB/T 14863-2013 English PDFUS$559.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 14863-2013: Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes Status: Obsolete GB/T 14863: Historical versions
Basic dataStandard ID: GB/T 14863-2013 (GB/T14863-2013)Description (Translated English): Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H80 Classification of International Standard: 29.045 Word Count Estimation: 14,152 Older Standard (superseded by this standard): GB/T 14863-1993 Quoted Standard: GB/T 14141; GB/T 14146; GB/T 14847; SEMI MF110-1105 Regulation (derived from): National Standards Bulletin 2013 No. 27 Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China Summary: This standard specifies the relationship between the measured capacitance with voltage gated and non-gated diode silicon epitaxial layer test method net carrier concentration. This standard applies to the epitaxial layer thickness of not less than a certa GB/T 14863-2013: Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order. Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes ICS 29.045 H80 National Standards of People's Republic of China Replacing GB/T 14863-1993 Voltage capacitance relationship gated and non-gated diode Silicon epitaxial layer net carrier concentration determination methods Issued on. 2013-12-31 2014-08-15 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released ForewordThis standard was drafted in accordance with GB/T 1.1-2009 given rules. This standard replaces GB/T 14863-1993 "gated and non-gated diode voltage - measured capacitance relations silicon epitaxial layer net carrier Concentration of the standard method. " This standard compared with GB/T 14863-1993, there are the following changes. --- Increasing the standard of "preface"; --- Adjust and increase the reference standard; --- Test conditions, test methods and simplified adjustment; --- Appendix adjusted. The standard proposed by the Ministry of Industry and Information Technology of the People's Republic of China. The standard by the China Electronics Standardization Institute. This standard was drafted. Ministry of Information Industry materials for Quality Supervision and Inspection Center, China Electronics Technology Group Corporation forty-sixth research The Chinese Institute of Electronics Standardization. The main drafters of this standard. He Xiukun, Dong Yan Hui, INNER section dawn, Liu Yun. This standard replaces the standards previously issued as follows. --- GB/T 14863-1993. Voltage capacitance relationship gated and non-gated diode Silicon epitaxial layer net carrier concentration determination methods1 ScopeThis standard specifies the determination of the relationship between the capacitor voltage-gated and non-gated diode silicon epitaxial layer test method for net carrier concentration. This standard applies to the epitaxial layer thickness of not less than a certain minimum thickness (see Appendix A) n-type or the same or opposite conductivity type on a substrate Measuring the net carrier concentration p-type epitaxial layer. This standard also applies to the polished silicon wafers net carrier concentration measurements.2 Normative referencesThe following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. Determination of GB/T 14141 silicon epitaxial layer, the diffusion layer and the ion implantation layer sheet resistance inline four-probe method GB/T 14146 silicon epitaxial layer carrier concentration - Mercury probe capacitance - voltage method GB/T 14847 lightly doped epitaxial silicon thickness on a substrate heavily doped infrared reflectance measurement method Test methods for diffusion or epitaxial silicon layer thickness measurement SEMIMF110-1105 angle grinding and staining techniques3 Terms and DefinitionsThe following terms and definitions apply to this document. 3.1 Breakdown voltage breakdownvoltage Measured diode reverse bias appears 10μA leakage current.4 principle of the methodMeasuring function gated or non-gated pn junction Schottky diode with a small reverse bias capacitance of the high-frequency signal, the capacitor being tested by the And a reverse bias voltage value is determined as a function of the net carrier concentration and depth. For gated diode measurement, a constant bias voltage applied to a gate.5 Measuring Instruments5.1 capacitance bridge or capacitance meter Full scale range 1pF ~ 1000pF, doubling to 10 or decrease. Measurement frequency range of 0.09MHz ~ 1.1MHz, each Range Accuracy better than 1.0% full scale, repeatability better than 0.25% of full scale. The instrument should be able to withstand 200V or higher absolute value of the outer A DC bias, can compensate for not less than 5pF external probe holder stray capacitance internal AC measurement signal is not greater than 0.05V (rms). 5.2 Digital voltmeter or potentiometer Its sensitivity is better than 1mV, accuracy better than 0.5% full scale, repeatability better than 0.25% of full scale, the input impedance is not less than ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 14863-2013_English be delivered?Answer: Upon your order, we will start to translate GB/T 14863-2013_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.Question 2: Can I share the purchased PDF of GB/T 14863-2013_English with my colleagues?Answer: Yes. 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Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 14863-2013 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |
