GB/T 14847-2010 English PDF

US$259.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email.
GB/T 14847-2010: Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Status: Valid

GB/T 14847: Historical versions

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 14847-2010	259	Add to Cart	3 days	Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance	Valid
GB/T 14847-1993	319	Add to Cart	3 days	Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance	Obsolete

Similar standards

GB/T 12963   GB/T 29055   GB/T 16596   GB/T 14264   GB/T 29057   GB/T 14844   

Basic data

Standard ID: GB/T 14847-2010 (GB/T14847-2010)
Description (Translated English): Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H80
Classification of International Standard: 29.045
Word Count Estimation: 11,115
Date of Issue: 2011-01-10
Date of Implementation: 2011-10-01
Older Standard (superseded by this standard): GB/T 14847-1993
Quoted Standard: GB/T 1552; GB/T 6379.2; GB/T 14264
Regulation (derived from): National Standard Approval Announcement 2011 No.1 (Total No.166)
Issuing agency(ies): General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary: This standard specifies the lightly doped silicon epitaxial layer thickness on the substrate heavily doped infrared reflectance measurements.

GB/T 14847-2010: Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance ICS 29.045 H80 National Standards of People's Republic of China Replacing GB/T 14847-1993 Heavily doped lightly doped silicon epitaxial layer on the substrate thickness Infrared reflectance measurement method Issued on. 2011-01-10 2011-10-01 implementation Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China Standardization Administration of China released

Foreword

This standard replaces GB/T 14847-1993 "heavily doped lightly doped silicon epitaxial layer on the substrate thickness infrared reflectance measurement method." This standard compared with GB/T 14847-1993, the major technical changes as follows. --- Modify the original standard "1 Subject Matter and Scope" in the substrate and the epitaxial layer resistivity at room temperature is a clear resistivity at 23 ℃, increase Plus loss of accuracy in the case, on which principle also applies to the test 0.5μm ~ N-type and P-type epitaxial layer between 2μm thickness; --- Modify the original standard "2 reference standard" for the "Normative references" to increase the relevant reference standards; --- Add "3 Terms and Definitions" section; --- Supplement and perfect "4 Principle Test Method Content"; --- Increase "disturbing factors section 5"; --- Original standard 5 to 7, by deleting "5.1 conductivity type substrate and the epitaxial layer and the substrate resistivity should be aware of the" content, increase prevention A large area of \u200b\u200bthe sample surface lattice is incomplete and requires a front surface of the test content cleaning process; --- Original standard 6 to 8, to select a sample of epitaxial thickness requirement was changed to the substrate resistivity and spectrum wavenumber position requirements, and 8.3.5 increased by the method GB/T 1552 as specified in the corresponding opposite position of the test substrate resistivity; --- Original standard 7 to 9, increase conversion formulas Extreme wave number and wavelength. 7.2 Calculation delete the original content experience; --- Original standard 8 to 10, increase the number of laboratory test a wider range of data analysis; --- Original standard 9 to 11, the test report requires increased infrared wave number range of the instrument, the mask aperture, the wave number scanning speed, wavelength Extreme series and so on. The standard equipment by the National Standardization Technical Committee and the Technical Committee material of the semiconductor material (SAC/TC203/SC2) centralized. This standard was drafted. Ningbo Lili Electronics Co., Ministry of Information Industry materials for Quality Supervision and Inspection Center. The main drafters of this standard. Li cautious, He Liangen, Xu Feng, Liupei Dong, He Xiukun. This part replaces the previous version of the standard published case. --- GB/T 14847-1993. Heavily doped lightly doped silicon epitaxial layer on the substrate thickness Infrared reflectance measurement method

1 Scope

This standard specifies the thickness of the lightly doped silicon epitaxial layer on the substrate heavily doped infrared reflectance measurements. This standard applies to the substrate at 23 ℃ resistivity of less than 0.02Ω · cm at 23 ℃ and the epitaxial layer resistivity greater than 0.1Ω · cm and an outer n-type and p-type silicon epitaxial layer measuring the thickness of the epitaxial layer of a thickness larger than 2μm; in the case of loss of accuracy, the method is also applicable to the measurement principle Test 0.5μm ~ n-type and p-type epitaxial layer thickness of between 2μm.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein Member. For undated references, the latest edition (including any amendments) applies to this document. Determination of GB/T 1552 silicon epitaxial layer, the diffusion layer and the ion implantation layer sheet resistance inline four-probe method GB/T 6379.2 measurement methods and results of Accuracy (trueness and precision) - Part 2. Determine the standard measurement method to repeat Of the basic methods of reproduction GB/T 14264 semiconductor material terms

3 Terms and Definitions

GB/T 14264 and defined by the following terms and definitions apply to this document. 3.1 Refractive index indexofrefraction Angle of incidence relative refraction angle sine sine ratio. Here the angle of incidence and refraction angle refers to the surface normal and infrared beam clamp angle. Resistivity greater than 0.1Ω · cm silicon material, while at the wavelength range of 6μm ~ 40μm, the ratio of the relative air is 3.42, the Value by Snell (Snel) Law determined.

4 Method summary

Differences 4.1 substrate and the epitaxial layer optical constants result sample reflectance spectra consecutive Minimax characteristic spectrum of the optical interference phenomenon, according to Extreme reflection spectrum wave number, the epitaxial layer and the substrate and the optical constants of the infrared beam epitaxial deposition layer thickness calculated angle of incidence on the sample. 4.2 is assumed that the reflectance of the epitaxial layer n1 is the relative wavelength independence. 4.3 When the beam epitaxial layer and substrate interface surface reflection light beam reflected optical path difference is an integer multiple of a half wavelength of the reflection spectrum can be Minimax observed values. Referring to Figure 1, C and D from the exit point of the beam phase difference δ of formula (1). δ = 2π (AB BC) é êê úúλ n1 - 2πADæè λ φ1-φ2 (1) Where. λ --- vacuum wavelength; n1 --- reflectance of the epitaxial layer, which may be an epitaxial layer of the optical path length is converted into the equivalent of a vacuum optical path length; ......

Image     

Tips & Frequently Asked Questions:

Question 1: How long will the true-PDF of GB/T 14847-2010_English be delivered?

Answer: Upon your order, we will start to translate GB/T 14847-2010_English as soon as possible, and keep you informed of the progress. The lead time is typically 1 ~ 3 working days. The lengthier the document the longer the lead time.

Question 2: Can I share the purchased PDF of GB/T 14847-2010_English with my colleagues?

Answer: Yes. The purchased PDF of GB/T 14847-2010_English will be deemed to be sold to your employer/organization who actually pays for it, including your colleagues and your employer's intranet.

Question 3: Does the price include tax/VAT?

Answer: Yes. Our tax invoice, downloaded/delivered in 9 seconds, includes all tax/VAT and complies with 100+ countries' tax regulations (tax exempted in 100+ countries) -- See Avoidance of Double Taxation Agreements (DTAs): List of DTAs signed between Singapore and 100+ countries

Question 4: Do you accept my currency other than USD?

Answer: Yes. If you need your currency to be printed on the invoice, please write an email to Sales@ChineseStandard.net. In 2 working-hours, we will create a special link for you to pay in any currencies. Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.

Question 5: Should I purchase the latest version GB/T 14847-2010?

Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 14847-2010 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically.