GB/T 14844-2018 English PDFUS$199.00 · In stock
Delivery: <= 3 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 14844-2018: Designations of semiconductor materials Status: Valid GB/T 14844: Historical versions
Basic dataStandard ID: GB/T 14844-2018 (GB/T14844-2018)Description (Translated English): Designations of semiconductor materials Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: H80 Classification of International Standard: 29.045 Word Count Estimation: 10,198 Date of Issue: 2018-12-28 Date of Implementation: 2019-11-01 Older Standard (superseded by this standard): GB/T 14844-1993 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 14844-2018: Designations of semiconductor materials---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.Designations of semiconductor materials ICS 29.045 H80 National Standards of People's Republic of China Replace GB/T 14844-1993 Semiconductor material grade representation Published on.2018-12-28 2019-11-01 implementation State market supervision and administration China National Standardization Administration issued ForewordThis standard was drafted in accordance with the rules given in GB/T 1.1-2009. This standard replaces GB/T 14844-1993 "Semiconductor material grade indication method", compared with GB/T 14844-1993 main technology The changes are as follows. --- Revised the description of the applicability of this standard in the scope (see Chapter 1, Chapter 1 of the.1993 edition); --- Divide the production method and use of the original 3.1.1 into two, and adjust the order of the brand representation method. The name is the first item. The production method is the second item (see 3.1.1,.1993 edition 3.1); --- Removed the "casting method" in the polycrystalline production method, adding "T for trichlorosilane method", "S for silane method", "F fluidized bed" "" and "other forms of production methods are referred to the above methods" (see 3.1.3, 3.1.1 of the.1993 edition); --- Modified "N for block" to "C for block" and added "G for granular" and "Other polymorphic shape representations" Refer to the above method" (see 3.1.4, 3.1.3 of the.1993 edition); --- Added "E for electronic grade use" and "S for solar grade use" (see 3.1.6); --- Adjusted the ordering of single-crystal grade representations (see 3.2.1, 3.2 of the.1993 edition); --- Added examples such as silicon single crystal Si, gallium arsenide single crystal GaAs, silicon carbide single crystal SiC, germanium single crystal Ge, indium telluride single crystal InSb, phosphorus Gallium single crystal GaP and indium phosphide single crystal InP, etc." (see 3.2.2); --- Added "C for ingot casting method" (see 3.2.3); --- Added conductivity type example "For example, N-type conductivity type doping elements are phosphorus P, 锑Sb, arsenic As, P-type conductivity type doping elements It is known as boron B, and the region is melted by gas phase doping with FGD (see 3.2.4); --- Added examples "for example, crystal orientation < 111>, < 100> and < 110>, etc." (see 3.2.5); --- Added examples such as silicon Si, GaAs GaAs, silicon carbide SiC, germanium Ge, indium antimonide wafer InSb, gallium phosphide wafer GaP And indium phosphide tablets such as InP" (see 3.3.2); --- Added "SCW for solar cutting blades" (see 3.3.4); --- Adjusted the order of the expression of the epitaxial film grades (see 3.4.1, 3.4 of the.1993 edition); --- Added examples such as silicon epitaxial wafer Si, gallium arsenide epitaxial wafer GaAs, silicon carbide epitaxial wafer SiC, germanium epitaxial wafer Ge, indium antimonide Extension InSb, gallium phosphide epitaxial wafer GaP and indium phosphide epitaxial wafer InP, etc. (see 3.4.2); --- Increased the letter representation in the brand (see Appendix A). This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards. The Technical Subcommittee Materials Branch (SAC/TC203/SC2) jointly proposed and managed. This standard was drafted. Zhejiang Silicon Materials Quality Inspection Center, Nonferrous Metals Technology and Economic Research Institute, Research Institute Semiconductor Materials Co., Ltd. Division, Zhejiang Haina Semiconductor Co., Ltd., Dongguan Zhongjiao Semiconductor Technology Co., Ltd., Nanjing Guosheng Electronics Co., Ltd., Jiangsu Zhongneng Silicon Industry Division Technology Development Co., Ltd., Suzhou GCL Solar Technology Co., Ltd., Tianjin Huanou Semiconductor Materials Technology Co., Ltd. The main drafters of this standard. Lou Chunlan, Mao Weizhong, Yang Suxin, Wang Xinhua, Zou Jianqiu, Sun Yan, Pan Jinping, Liu Xiaoxia, Ma Linbao, Gong Longfei, Zhang Xueyu, Ding Xiaomin, He Dongjiang. The previous versions of the standards replaced by this standard are. ---GB/T 14844-1993. Semiconductor material grade representation1 ScopeThis standard specifies the brand representation of semiconductor polycrystalline, single crystal, wafer, epitaxial wafers and other products. This standard applies to the grades of semiconductor polycrystalline, single crystal, wafer, epitaxial wafers, etc., other semiconductor material grades can refer to carried out.2 brand classificationAccording to the crystal structure and product shape, the semiconductor material grades are divided into four types. polycrystalline, single crystal, wafer and epitaxial wafer. See Appendix A for the meaning.3 brand representation3.1 polycrystalline brand 3.1.1 Polycrystalline grades are expressed as. P - among them. 1, 2, 3, 4, and 5 represent the first to fifth items of the brand, respectively. 3.1.2 The first P in the first term of the grade indicates polycrystalline, and the latter digits represent the polycrystalline name by molecular formula, such as silicon Si, 锗Ge, and the like. 3.1.3 The second term of the grade indicates the production method of polycrystal, expressed in capitalized form of the first letter of English, where. a) T represents the trichlorosilane method; b) S represents a silane method; c) R represents a reduction method; d) Z represents the zone melting method; e) F represents the fluidized bed method; f) Other production method representations are carried out with reference to the above methods. 3.1.4 The third term of the grade indicates the shape of the polycrystal, represented by the capital letter of the first letter of the English, where. a) I indicates a rod shape; b) C means blocky; c) G means granular; d) Other polymorphic shape representations are made with reference to the above methods. 3.1.5 The fourth item of the grade indicates the grade of the polycrystalline product, expressed in Arabic numerals or English letters. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 14844-2018_English be delivered?Answer: Upon your order, we will start to translate GB/T 14844-2018_English as soon as possible, and keep you informed of the progress. 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Otherwise, follow the normal steps: Add to Cart -- Checkout -- Select your currency to pay.Question 5: Should I purchase the latest version GB/T 14844-2018?Answer: Yes. Unless special scenarios such as technical constraints or academic study, you should always prioritize to purchase the latest version GB/T 14844-2018 even if the enforcement date is in future. Complying with the latest version means that, by default, it also complies with all the earlier versions, technically. |
