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GB/T 30453-2013: Metallographs collection for original defects of crystalline silicon
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| GB/T 30453-2013 | English | 1859 |
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Metallographs collection for original defects of crystalline silicon
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GB/T 30453-2013
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Basic data | Standard ID | GB/T 30453-2013 (GB/T30453-2013) | | Description (Translated English) | Metallographs collection for original defects of crystalline silicon | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H80 | | Classification of International Standard | 29.045 | | Word Count Estimation | 84,86 | | Quoted Standard | GB/T 1554; GB/T 4058; GB/T 14264 | | Regulation (derived from) | National Standards Bulletin 2013 No. 27 | | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | | Summary | This standard provides a variety of native defects and induced defects are closely related terms and their morphology map polycrystalline silicon, monocrystalline silicon, wafers and epitaxial silicon wafers and other silicon materials. Analysis of its ca | GB/T 30453-2013: Metallographs collection for original defects of crystalline silicon---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Metallographs collection for original defects of crystalline silicon
ICS 29.045
H80
National Standards of People's Republic of China
Native silicon material defect map
Issued on. 2013-12-31
2014-10-01 implementation
Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China
Standardization Administration of China released
Table of Contents
Introduction Ⅲ
1 Scope 1
2 Normative references 1
3 Terms and definitions
Incompleteness polycrystalline silicon structure 4 1
5 silicon single crystal defects 4
6 9 silicon processing defects
7 silicon wafer defect 11
Appendix A (informative) hydrogen-induced defects 76
Index 79
Foreword
This standard was drafted in accordance with the rules of GB/T 1.1-2009 making.
This standard by National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch (SAC/TC203/SC2) and focal points.
This standard was drafted. Grinm Semiconductor Materials Co., Ltd., Dongfang Electric Group Emei Semiconductor Materials Co., Ltd., Nanjing State
Sheng Electronics Co., Ltd., Hangzhou Haina Semiconductor Co., universal silicon peak Electronics Co., Ltd., Sichuan Xinguang Silicon Technology Co., Ltd.
The company, Shaanxi Tianhong Silicon Material Co., Ltd., China Nonferrous Metals Industry Standards and Metrology Institute for Quality.
The main drafters of this standard. Sun Yan, Cao Zi, Difu Yi, Yang, Tan Weidong, Huang Xiaorong, Chunlan floor, Wangfei Yao, Shi Yu, Liuyun Xia, Chen He,
Liang Hong, Luo Liping, Yongmei, Qibu Kun, Li Hui, to Lei.
Native silicon material defect map
1 Scope
This standard gives a variety of native defects in polycrystalline silicon, monocrystalline silicon, wafers and epitaxial silicon wafers and other silicon materials and their closely related induced defects
Terms and morphology patterns. Analysis of its causes and elimination methods.
This standard applies to testing the production of polycrystalline silicon research, monocrystalline silicon, silicon and epitaxial silicon wafers and other silicon materials in a variety of defects. Silicon devices, set
Research into the production circuit may also refer to this standard.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 1554 crystallographic perfection of silicon by preferential etch test methods
GB/T 4058 Test Method polished silicon oxide induced defects
GB/T 14264 semiconductor material terms
3 Terms and Definitions
Terms and definitions GB/T 14264 apply to this document defined.
Incompleteness polycrystalline silicon structure 4
4.1 coarse grains
4.1.1 Characteristics
The trichlorosilane (SiHCl3) or silicon tetrachloride (SiCl4) and hydrogen reduction of silane (SiH4) thermal decomposition grown polycrystalline silicon, dense surface
And crystallite size, and qualified polycrystalline significant differences (see Fig. 1 to 4).
4.1.2 Causes
When the deposition of polycrystalline growth rate too fast, high temperature, easy to produce coarse particles.
4.1.3 The Effect of Single Crystal
Ago to the cleaning process for preparing a single crystal grain material difficult, and become sources of impurities in a single crystal.
4.1.4 Elimination
Reasonable control of the deposition rate, the ratio of the feed control, adjust the gas flow rate.
4.2 Temperature circle
4.2.1 Characteristics
Under normal circumstances, the polycrystalline silicon grains form cross section or radial radiation dendritic growth (see Figure 5). But sometimes it can be observed in the silicon core
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