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GB/T 5252-2020

Chinese Standard: 'GB/T 5252-2020'
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GB/T 5252-2020English179 Add to Cart Days<=3 Test method for dislocation density of monocrystal germanium Valid GB/T 5252-2020
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BASIC DATA
Standard ID GB/T 5252-2020 (GB/T5252-2020)
Description (Translated English) Test method for dislocation density of monocrystal germanium
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H21
Classification of International Standard 77.040
Word Count Estimation 10,153
Date of Issue 2020-06-02
Date of Implementation 2021-04-01
Older Standard (superseded by this standard) GB/T 5252-2006
Drafting Organization Youyan Optoelectronics New Materials Co., Ltd., Beijing Guojinghui Infrared Optical Technology Co., Ltd., Guohe General Test Evaluation and Certification Co., Ltd., Yunnan Lincang Xinyuan Germanium Industry Co., Ltd., the 46th Research Institute of China Electronics Technology Group Corporation , Guangdong Pioneer Rare Materials Co., Ltd., Sinogermanium Technology Co., Ltd., Yiwu Limai New Materials Co., Ltd.
Administrative Organization National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Sub-Technical Committee (SAC/TC 203/SC 2)
Regulation (derived from) National Standards Announcement No. 14 of 2020
Proposing organization National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Sub-Technical Committee (SAC/TC 203/SC 2)
Issuing agency(ies) State Administration of Market Supervision and Administration, National Standardization Management Committee

GB/T 5252-2020
(Test method for dislocation density of germanium single crystal)
ICS 77.040
H21
National Standards of People's Republic of China
Replace GB/T 5252-2006
Test method for dislocation density of germanium single crystal
2020-06-02 release
2021-04-01 Implementation
State Administration of Market Supervision and Administration
Issued by the National Standardization Management Committee
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 5252-2006 "Measurement Method for the Dislocation Corrosion Density of Germanium Single Crystal". This standard and GB/T 5252-2006
In comparison, the main technical changes except for editorial changes are as follows.
--- Modified the scope of application of the standard (see Chapter 1, Chapter 1 of the.2006 edition);
--- Added normative references (see Chapter 2);
--- Modified terms and definitions (see Chapter 3, Chapter 2 of the.2006 edition);
--- Modified the content of the method principle (see Chapter 4, Chapter 3 of the.2006 edition);
--- Modify the reagent materials in the.2006 edition of the standard "Sample Preparation" into separate chapters (see Chapter 5, Chapter 4 of the.2006 edition);
--- Modified the requirements for sample preparation (see Chapter 7, Chapter 4 of the.2006 edition);
--- Added the test point positions of germanium single crystals with diameters of 110mm, 130mm and 150mm (see 8.3);
--- Added the precautions for dislocation corrosion pit count (see 8.5);
--- Modified the content of test data processing (see Chapter 9, Chapter 7 of the.2006 edition);
--- Using the dislocation density of 1000cm-2 as the cut-off value, the precision has been modified (see Chapter 10, Chapter 9 of the.2006 edition);
--- Modified the content of the test report (see Chapter 11, Chapter 8 of the.2006 edition).
This standard consists of the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
The Technical Subcommittee of Chemical Technology Committee (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted by. Youyan Optoelectronics New Materials Co., Ltd., Beijing Guojinghui Infrared Optical Technology Co., Ltd., Guohe General Survey
Trial Evaluation and Certification Co., Ltd., Yunnan Lincang Xinyuan Germanium Industry Co., Ltd., China Electronics Technology Group Corporation 46th Research Institute, Guangdong
Pioneer Rare Materials Co., Ltd., China Germanium Technology Co., Ltd., Yiwu Limai New Materials Co., Ltd.
The main drafters of this standard. Zhang Lu, Feng Deshen, Ma Huichao, Pu Shikun, Yao Kang, Liu Xinjun, Guo Ronggui, Xiang Tsinghua, Wei Shenglin,
Huang Hongweiwen.
The previous versions of the standard replaced by this standard are as follows.
---GB/T 5252-1985, GB/T 5252-2006.
Test method for dislocation density of germanium single crystal
1 Scope
This standard specifies the test method for the dislocation density of germanium single crystal.
This standard is applicable to the test of dislocation density of germanium single crystals on {111}, {100} and {113} planes. The test range is 0cm-2~100000cm-2.
2 Normative references
The following documents are essential for the application of this document. For dated reference documents, only the dated version applies to this article
Pieces. For the cited documents without date, the latest version (including all amendments) applies to this document.
GB/T 8756 Germanium crystal defect map
GB/T 14264 Terminology of semiconductor materials
3 Terms and definitions
The terms and definitions defined in GB/T 8756 and GB/T 14264 apply to this document.
4 Method principle
The lattice around the dislocation in the germanium single crystal will be distorted. When some chemical etchant is used to etch the crystal surface, the dislocation on the crystal surface
The corrosion speed is faster at the outcrop, and then the corrosion pit with a specific shape is formed. Observe under a microscope and count these according to certain rules
The corrosion pits of a particular shape, the number of corrosion pits per unit field of view area is the dislocation density.
5 Reagents and materials
Unless otherwise specified, only reagents confirmed to be analytically pure and above are used in the test analysis, and the resistivity of the water used is not less than 12MΩ·cm.
5.1 Potassium ferricyanide [K3Fe(CN)6], mass fraction is not less than 99%.
5.2 Potassium hydroxide (KOH), the mass fraction is not less than 85%.
5.3 Hydrofluoric acid (HF), the mass fraction is not less than 40%.
5.4 Nitric acid (HNO3), the mass fraction is 65%~68%.
5.5 Hydrogen peroxide (H2O2), the mass fraction is not less than 30%.
5.6 Copper nitrate solution. the mass fraction is 10%, prepared with Cu(NO3)2 with a mass fraction of not less than 99%.
5.7 Polishing liquid. a mixture of HF and HNO3, the volume ratio is 1.(1~3).
5.8 Corrosion solution A. Weigh 80g of potassium ferricyanide and 120g of potassium hydroxide in a beaker, dissolve with 1000mL of water, and mix well.
5.9 Corrosion solution B. a mixture of HF and HNO3, the volume ratio is 1.4.
5.10 Corrosion solution C. HF, HNO3, 10%Cu(NO3)2 solution, the volume ratio is 2.1.1.
5.11 Etching solution D. a mixture of HF, H2O2, and 10% Cu(NO3)2 solution, the volume ratio is 2.1.1.
5.12 Silicon carbide abrasive (corundum) or white corundum powder. the particle size is not more than 14μm.
Related standard: GB/T 5584.1-2020    GB/T 5584.2-2020
Related PDF sample: GB/T 2522-2017    GB/T 351-2019