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GB/T 42676-2023: Test method for crystalline quality of semiconductive single crystal - X-ray diffraction method
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| GB/T 42676-2023 | English | 189 |
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Test method for crystalline quality of semiconductive single crystal - X-ray diffraction method
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GB/T 42676-2023
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Basic data | Standard ID | GB/T 42676-2023 (GB/T42676-2023) | | Description (Translated English) | Test method for crystalline quality of semiconductive single crystal - X-ray diffraction method | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | H21 | | Classification of International Standard | 77.040 | | Word Count Estimation | 10,155 | | Date of Issue | 2023-08-06 | | Date of Implementation | 2024-03-01 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 42676-2023: Test method for crystalline quality of semiconductive single crystal - X-ray diffraction method
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ICS 77.040
CCSH21
National Standards of People's Republic of China
Semiconductor single crystal crystal quality testing X-ray diffraction method
2024-03-01 Implementation
State Administration for Market Regulation
Released by the National Standardization Administration Committee
Foreword
This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents.
This document is sponsored by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards
It was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2).
This document was drafted by. China Electronics Technology Group Corporation No. 46 Research Institute, Nonferrous Metals Technology and Economic Research Institute Co., Ltd.
Division, Beijing Tongmei Crystal Technology Co., Ltd., Shandong Youyan Semiconductor Materials Co., Ltd., Hongyuan New Materials (Baotou) Co., Ltd., Harbin
Erbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., National Standard (Beijing) Inspection and Certification
Co., Ltd., Dandong New Oriental Crystal Instrument Co., Ltd., Youyan Guojinghui New Materials Co., Ltd., Jiangsu Zhuoyuan Semiconductor Co., Ltd., Xinmei
Light (Suzhou) Semiconductor Technology Co., Ltd.
The main drafters of this document. He Xuankun, Liu Lina, Li Suqing, Pang Yue, Ma Chunxi, Xu Rong, Ren Diansheng, Wang Yuanli, Zhu Xiaotong, Li Xiangyu,
Yang Yang, Pan Jinping, Wang Shuming, Zhao Songbin, Lin Quan, Li Guoping, Zhang Xinfeng, Zhao Lili, Xia Qiuliang.
Semiconductor single crystal crystal quality testing X-ray diffraction method
1 Scope
This document describes the use of X-ray diffractometer to test the half-maximum width of the rocking curve of double crystals of semiconductor materials, and then evaluate the semiconductor single crystal.
quality approach.
This document is suitable for testing the crystal quality of single crystal materials such as silicon carbide, diamond, and gallium oxide, and semiconductor materials such as silicon, gallium arsenide, and indium phosphide.
The test of material crystal quality can also be performed with reference to this document.
2 Normative reference documents
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations
For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to
this document.
GB/T 14264 Semiconductor material terminology
GB/T 14666 Analytical Chemistry Terminology
GB/T 32267 Terminology for performance measurement of analytical instruments
3 Terms and definitions
The following terms and definitions as defined in GB/T 14264, GB/T 14666 and GB/T 32267 apply to this document.
3.1
χaxis
The axis of the tilted sample formed by the intersection of the sample stage surface and the diffraction plane.
3.2
χangleχangle
The angle between a crystal plane of the sample and the surface of the sample.
3.3
φangleφangle
The angle of rotation of the sample stage around the normal to the sample surface.
3.4
ω angleωangle
The angle between the incident X-ray and the surface of the sample stage.
4 Principles
4.1 The atoms of a single crystal are arranged in a three-dimensional periodic structure. The crystal can be regarded as a series of parallel atoms arranged at a vertical distance d in space.
Formed by a plane, when a beam of parallel monochromatic X-rays is incident on the plane, and the optical path difference between the X-rays shining on adjacent planes is its wavelength
When it is an integer multiple of n times, diffraction (reflection) will occur. When the angle θ between the incident beam and the reflection plane, the X-ray wavelength λ, and the interplanar spacing
When d and diffraction order n simultaneously satisfy Bragg's theorem 2dsinθ=nλ, the X-ray diffraction beam intensity will reach the maximum value, and θ at this time is
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