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GB/T 40109-2021: Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
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Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
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GB/T 40109-2021
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Basic data | Standard ID | GB/T 40109-2021 (GB/T40109-2021) | | Description (Translated English) | Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | G04 | | Word Count Estimation | 14,170 | | Issuing agency(ies) | State Administration for Market Regulation, China National Standardization Administration | GB/T 40109-2021: Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis-Secondary-ion mass spectrometry-Method for depth profiling of boron in silicon
ICS 71.040.40
CCSG04
National Standards of People's Republic of China
Surface Chemical Analysis Secondary Ion Mass Spectrometry
Depth analysis method of boron in silicon
(ISO 17560.2014, IDT)
Released on 2021-05-21
2021-12-01 implementation
State Administration of Market Supervision and Administration
Issued by the National Standardization Management Committee
Table of contents
Foreword Ⅲ
Introduction Ⅳ
1 Scope 1
2 Normative references 1
3 Symbols and abbreviations 1
4 Principle 2
5 Reference material 2
5.1 Reference material used to calibrate relative sensitivity factor 2
5.2 Reference material used to calibrate the depth 2
6 Instrument 2
6.1 Secondary ion mass spectrometer 2
6.2 Stylus profiler 2
6.3 Optical interferometer 2
7 Sample 2
8 Step 2
8.1 Adjustment of the secondary ion mass spectrometer 2
8.2 Optimizing the settings of the secondary ion mass spectrometer 3
8.3 Injection 3
8.4 Detect ion 3
8.5 Sample testing 3
8.6 Calibration 4
9 Presentation of results 5
10 Test report 5
Appendix A (Informative) Test Statistics Report of Needle Surface Profiler 6
Reference 8
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents"
Drafting.
This document uses the translation method equivalent to ISO 17560.2014 "Surface Chemical Analysis, Secondary Ion Mass Spectrometry, Depth Analysis Method for Boron in Silicon
law".
The Chinese documents that have consistent correspondence with the normatively cited international documents in this document are as follows.
---GB/T 20176-2006 Surface Chemical Analysis Secondary Ion Mass Spectrometry Determination of the Atomic Concentration of Boron in Silicon with Uniformly Doped Substances
Degree (ISO 14237.2000, IDT)
Please note that some of the contents of this document may involve patents. The issuing agency of this document is not responsible for identifying patents.
This document was proposed and managed by the National Standardization Technical Committee for Microbeam Analysis (SAC/TC38).
This document was drafted by the 46th Research Institute of China Electronics Technology Group Corporation.
The main drafters of this document. Ma Nongnong, He Youqin, Chen Xiao, Zhang Xin, Wang Dongxue, Li Zhanping.
Introduction
This document is used for the quantitative depth analysis of boron in silicon using secondary-ion mass spectrometry (SIMS).
Formulate.
For quantitative depth profiling, calibration of element concentration and profiling depth is essential. ISO 14237.2010 stipulates in silicon
The method for determining the concentration of boron, the international standard is quoted in this document. The national standard GB/T 22461 [2] established the surface chemical analysis field
The vocabulary of domain conventional terms and spectroscopy terms, the related terms and vocabulary involved in this document are consistent with it.
This document is suitable for the in-depth analysis of boron in monocrystalline silicon, polycrystalline silicon, and amorphous silicon by secondary ion mass spectrometry, and the use of stylus
Surface profiler or optical interferometer for depth calibration.
Surface Chemical Analysis Secondary Ion Mass Spectrometry
Depth analysis method of boron in silicon
1 Scope
This document describes a method for deep analysis of boron in silicon using a sector magnetic field or a quadrupole secondary ion mass spectrometer, and the use of a stylus
Depth calibration method for surface profiler or optical interferometer.
This document is applicable to monocrystalline silicon, polycrystalline silicon or amorphous silicon with a boron atom concentration range of 1×1016atoms/cm3~1×1020atoms/cm3
For silicon samples, the sputtering crater depth is 50nm and above.
2 Normative references
The contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations
Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to
This document.
ISO 14237.2010 Surface Chemical Analysis, Secondary Ion Mass Spectrometry, Determination of the Atomic Concentration of Boron in Silicon with a Uniformly Doped Material
facechemicalanalysis-Secondary-ionmassspectrometry-Determinationofboronatomicconcentra-
tioninsiliconusinguniformlydopedmaterials)
3 Symbols and abbreviations
The following symbols and abbreviations apply to this document.
The total atomic concentration of boron in the i test cycle of Ci, expressed by the number of atoms per unit volume (atoms/cm3)
C10i The atomic concentration of the boron 10 isotope in the ith test cycle, expressed by the number of atoms per unit volume (atoms/cm3)
C11i The atomic concentration of the boron 11 isotope in the ith test cycle, expressed by the number of atoms per unit volume (atoms/cm3)
di The depth of the i-th test cycle, expressed in micrometers (μm) or nanometers (nm)
dt The depth of the crater, expressed in micrometers (μm) or nanometers (nm)
I10i In the i-th cycle test, the ion intensity of the boron 10 isotope, expressed in counts/s
I11i In the ith test cycle, the ion intensity of the boron 11 isotope, expressed in counts/s
ISii In the i-th test cycle, the substrate silicon ion intensity, expressed in counts/s
J10i The ratio of the intensity of boron 10 isotope ion to silicon ion in the ith test cycle
J11i The ratio of the intensity of boron 11 isotope ion to silicon ion in the ith test cycle
J10BG The ratio of the average background value of boron 10 isotope ion to the intensity of silicon ion
J11BG The ratio of the average background value of boron 11 isotope ion to the intensity of silicon ion
N total number of test cycles
T total sputtering time, expressed in seconds (s)
tBi The start time of boron ion collection in the i-th test cycle, expressed in seconds (s)
ΔtBi The duration of boron ion collection in each test cycle, expressed in seconds (s)
δ mass discrimination correction factor
λ Optical interferometer measures the wavelength of light waves, expressed in micrometers (μm) or nanometers (nm)
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