GB/T 30655-2014 PDF English
US$160.00 · In stock · Download in 9 secondsGB/T 30655-2014: Test methods for internal quantum efficiency of nitride LED epitaxial layers Delivery: 9 seconds. True-PDF full-copy in English & invoice will be downloaded + auto-delivered via email. See step-by-step procedureStatus: Valid
| Standard ID | Contents [version] | USD | STEP2 | [PDF] delivery | Name of Chinese Standard | Status |
| GB/T 30655-2014 | English | 160 |
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Test methods for internal quantum efficiency of nitride LED epitaxial layers
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GB/T 30655-2014: Test methods for internal quantum efficiency of nitride LED epitaxial layers---This is an excerpt. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.), auto-downloaded/delivered in 9 seconds, can be purchased online: https://www.ChineseStandard.net/PDF.aspx/GBT30655-2014
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 77.040.99
H 21
Test Methods for Internal Quantum Efficiency of Nitride
LED Epitaxial Layers
Issued on: DECEMBER 31, 2014
Implemented on: SEPTEMBER 1, 2015
Issued by. General Administration of Quality Supervision, Inspection and
Quarantine;
Standardization Administration of the People’s Republic of China.
Table of Contents
Foreword... 3
1 Scope... 4
2 Normative Reference... 4
3 Terms and Definitions... 4
4 Symbols... 5
5 Method Principle... 6
6 Instrument... 9
7 Test Environment... 10
8 Specimens... 10
9 Test Procedure... 10
10 Calculation and Presentation of Test Results... 12
11 Precision... 14
12 Quality Assurance and Control... 14
13 Test Report... 14
Test Methods for Internal Quantum Efficiency of Nitride
LED Epitaxial Layers
1 Scope
This Standard specifies the test method for the internal quantum efficiency of III-V nitride LED
epitaxial layers.
This Standard is applicable to the test of the internal quantum efficiency of quantum well LEDs
based on III-V nitrides.
2 Normative Reference
The following documents are essential to the application of this Document. For the dated
documents, only the versions with the dates indicated are applicable to this Document; for the
undated documents, only the latest version (including all the amendments) is applicable to this
Document.
GB/T 6379 Accuracy (trueness and precision) of measurement methods and results
3 Terms and Definitions
For the purposes of this Document, the following terms and definitions apply.
3.1 Radiative recombination
During the transition of electrons from a high-energy state to a low-energy state, a certain
amount of energy shall be released when electrons and holes recombine. If the energy is
released in the form of photons, this recombination is called radiative recombination.
3.2 Nonradiative recombination
During the transition of electrons from a high-energy state to a low-energy state, a certain
amount of energy shall be released when electrons and holes recombine. The recombination
that releases energy in ways other than photon radiation is called nonradiative recombination.
3.3 Extraction efficiency
The ratio between the number of photons emitted by a light-emitting diode per unit time and
the number of photons generated by radiative recombination in the active area.
3.4 External quantum efficiency
The ratio OF the number of photons emitted by the number of injected carriers per unit time
TO the number of injected carriers.
3.5 Internal quantum efficiency
Under certain injection conditions, the ratio of the number of photons generated by radiative
recombination per unit time to the total number of composite carriers injected per unit time.
3.6 Injection efficiency
The ratio between the number of composite carriers injected into the active area and the total
number of injected carriers per unit time under certain injection conditions.
3.7 Exciton
An electron-hole pair that is bound together by the Coulomb interaction.
3.8 Electroluminescence
A physical phenomenon in which a material emits light through electrical injection.
3.9 Photoluminescence
A physical phenomenon in which a material emits light through light stimulation.
4 Symbols
The following symbols are applicable to this Document.
N. Carrier concentration.
EL. Electroluminescence.
PL. Photoluminescence.
IPL. PL integrated intensity.
Plaser. Laser power.
ηEQE. External quantum efficiency.
ηIQE. Internal quantum efficiency.
7 Test Environment
Unless otherwise specified, the test shall be carried out under the following conditions.
a) Ambient temperature. 23℃±5℃;
b) Relative humidity. ≤90%;
c) Atmospheric pressure. 86kPa~106kPa;
d) The test environment shall be free of mechanical vibration, electromagnetic, light,
chemical corrosion and other interference that may affect the test accuracy.
8 Specimens
The test specimens shall be polished wafers with clean wafer surfaces.
9 Test Procedure
9.1 Preparation of test
Before the test, check and make sure that all instruments in the test system are in good
conditions.
9.2 Test steps
9.2.1 The steps for testing the internal quantum efficiency by the ratio of the integrated intensity
of low-temperature and room-temperature photoluminescence spectra are as follows.
a) Turn on the laser and check whether it works properly;
b) Turn on the power switches of the monochromator and detector in turn and check whether
they work properly;
c) Calibrate the monochromator by a standard light source;
d) Install the sample on the sample rack; then install the vacuum protective cover; evacuate
the vacuum; start circulating cooling water and compressor; wait until the temperature
drops below 20K, and start measuring after stabilizing at this temperature for 30 min;
e) Use the data acquisition system to measure the low-temperature photoluminescence
spectrum by dedicated software;
f) Then use resistance heating to raise the temperature to room temperature (295K) and
stabilize for 30 min, and continue to use the data acquisition system to measure the room-
temperature photoluminescence spectrum by dedicated software;
g) Turn off power supplies of all the instruments after the test is completely finished;
h) Calculate the internal quantum efficiency by software.
9.2.2 The steps for testing the internal quantum efficiency by the integral intensity of the
photoluminescence spectrum with constant temperature-variable excitation density are as
follows.
a) Turn on the laser and check whether it works properly;
b) Turn on the power switches of the monochromator and detector in turn to check whether
they work properly;
c) Calibrate the monochromator with a standard light source; if the room temperature test is
used, proceed directly to step e); if the high and low temperature test is used, proceed to
step d);
d) Install the sample on the sample rack; then install the vacuum protective cover; evacuate
the vacuum; start the circulating cooling water and compressor; wait until the
temperature reaches the set temperature, and start the measurement after it stabilizes at
this temperature for 30 min;
e) Change the laser excitation density by inserting attenuation plates with different
attenuation multiples in the laser optical path; and then use the data acquisition system
to measure the photoluminescence spectra under different laser excitation densities by
dedicated software;
f) Then restore the temperature to room temperature (295K) through resistance heating or
cooling machine; and after stabilizing for 30 min, turn off power supplies of all the
instrument;
g) Calculate the internal quantum efficiency by software.
9.2.3 The steps to infer the internal quantum efficiency from the external quantum efficiency
by the light extraction model are as follows.
a) Turn on the switches of power supply and detector power in turn to check whether they
are working properly;
b) Calibrate the integrating sphere with a standard light source;
c) Install the sample on the sample rack; turn on the power supply to the LED; start
measuring the light power of the LED; and calculate the external quantum efficiency by
dividing it by the input power (the product of current and voltage);
...... Source: Above contents are excerpted from the full-copy PDF -- translated/reviewed by: www.ChineseStandard.net / Wayne Zheng et al.
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