Search result: GB/T 15651.7-2024
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Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
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GB/T 15651.7-2024
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| Standard ID | GB/T 15651.7-2024 (GB/T15651.7-2024) | | Description (Translated English) | Semiconductor devices -- Part 5-7: Optoelectronic devices -- Photodiodes and phototransistors | | Sector / Industry | National Standard (Recommended) | | Classification of Chinese Standard | L53 | | Classification of International Standard | 31.260 | | Word Count Estimation | 22,255 | | Date of Issue | 2024-03-15 | | Date of Implementation | 2024-07-01 | | Drafting Organization | China Electronics Technology Standardization Institute, Xiamen Product Quality Supervision and Inspection Institute, Huizhou Zhongkai High-tech Zone LED Brand Development Promotion Association, Zhejiang Zhiling Technology Co., Ltd., China Electronics Technology Group Corporation Thirteenth Research Institute, Xiamen Hualian Electronics Co., Ltd. , China Optics and Optoelectronics Industry Association, Sichuan Huati Lighting Technology Co., Ltd., Peking University Dongguan Optoelectronics Research Institute | | Administrative Organization | Ministry of Industry and Information Technology of the People's Republic of China | | Proposing organization | Ministry of Industry and Information Technology of the People's Republic of China | | Issuing agency(ies) | State Administration for Market Regulation, National Standardization Administration |
GB/T 15651.7-2024.Semiconductor devices Part 5-7.Optoelectronic devices Photodiodes and phototransistors
ICS 31.260
CCSL53
National Standards of People's Republic of China
Semiconductor devices Part 5-7.Optoelectronic devices
Photodiodes and Phototransistors
(IEC 60747-5-7.2016,MOD)
Released on 2024-03-15
2024-07-01 Implementation
State Administration for Market Regulation
The National Standardization Administration issued
Table of Contents
Preface III
Introduction IV
1 Range 1
2 Normative references 1
3 Terms and Definitions 1
4 Basic Ratings and Characteristics of Photodiodes 9
5 Basic Ratings and Characteristics of Phototransistors 10
6 Test methods for photosensitive devices 12
References 16
Preface
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1.Structure and drafting rules for standardization documents"
Drafting.
This document is Part 5-7 of GB/T 15651.GB/T 15651 has published the following parts.
--- Semiconductor devices Discrete devices and integrated circuits Part 5.Optoelectronic devices (GB/T 15651-1995);
--- Semiconductor discrete devices and integrated circuits Part 5-2.Basic ratings and characteristics of optoelectronic devices (GB/T 15651.2-
2003);
--- Semiconductor discrete devices and integrated circuits Part 5-3.Test methods for optoelectronic devices (GB/T 15651.3-2003);
--- Semiconductor devices discrete devices Part 5-4.Optoelectronic devices semiconductor lasers (GB/T 15651.4-2017);
--- Semiconductor devices Part 5-5.Optoelectronic devices-Photocouplers (GB/T 15651.5-2024);
--- Semiconductor devices Part 5-6.Optoelectronic devices-Light emitting diodes (GB/T 15651.6-2023);
This document is modified to adopt IEC 60747-5-7.2016 "Semiconductor devices Part 5-7.Optoelectronic devices Photodiodes and optoelectronic devices
transistor".
This document adjusts Chapters 4 to 7 of the international document to Chapter 3, which meets the requirements of my country's standards and facilitates the use of the standards.
The chapter number will be postponed.
The following minimal editorial changes were made to this document.
a) Deleted the informative Appendix A, which is irrelevant to the content of this document;
b) "3.2 The wavelength of optical radiation is between the transition region to X-rays (λ≈1nm) and the transition region to radio waves (λ≈1mm)
The second (λ≈1nm) of "electromagnetic radiation" was changed to (λ≈1mm) to correct the editorial error.
Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.
This document is proposed and coordinated by the Ministry of Industry and Information Technology of the People's Republic of China.
This document was drafted by. China Electronics Technology Standardization Institute, Xiamen Product Quality Supervision and Inspection Institute, Huizhou Zhongkai High-tech Zone LED
Brand Development Promotion Association, Zhejiang Zhiling Technology Co., Ltd., the 13th Research Institute of China Electronics Technology Group Corporation, Xiamen Hualian Electronics Co., Ltd.
Co., Ltd., China Optics and Optoelectronics Industry Association, Sichuan Huati Lighting Technology Co., Ltd., and Peking University Dongguan Optoelectronics Research Institute.
The main drafters of this document are. Liu Xiujuan, Ge Lihong, Cheng Senji, Li Junkai, Liu Dongyue, Zheng Zhibin, Hong Zhen, Duan Qiong, Li Jun, and Li Chengming.
introduction
Parts 5-7 of the GB/T 15651 series were developed to provide testing and evaluation of photodiode and phototransistor products for general industrial applications.
Provide appropriate basis for price, etc.
GB/T 15651 is a series of standards for semiconductor optoelectronic devices, which mainly stipulates the overall requirements, basic ratings and
Characteristics, test methods, technical requirements for semiconductor lasers, optocouplers, light-emitting diodes, photodiodes and phototransistors,
The quality assurance regulations and other contents are planned to consist of the following parts.
--- Part 5.Optoelectronic devices. The purpose is to give semiconductor photoelectron emitting devices, semiconductor photosensitive components, internal working
Standards for semiconductor devices and device types whose mechanisms are related to optical radiation.
--- Part 5-2.Basic ratings and characteristics of optoelectronic devices. The purpose is to give semiconductor photoelectron emitting devices, semiconductor
Photoelectric detection devices, semiconductor photosensitive devices, semiconductor devices that work with internal light radiation, and basic devices classified as optoelectronic devices
These ratings and characteristics are not applicable to optical fiber systems or subsystems.
--- Part 5-3.Test methods for optoelectronic devices. The purpose is to provide test methods for optoelectronic devices for optical fiber systems or
Except for subsystems.
--- Part 5-4.Optoelectronic devices - semiconductor lasers. The purpose is to give the basic ratings, characteristics and
Test Methods.
--- Part 5-5.Optoelectronic devices, optocouplers. The purpose is to give the terminology, basic ratings, characteristics,
Safety tests and measurement methods.
--- Part 5-6.Optoelectronic devices Light Emitting Diodes. The purpose is to provide the terminology, ratings and characteristics, test
Testing methods and quality assessment methods.
--- Part 5-7.Optoelectronic devices, photodiodes and phototransistors. The purpose is to give the photodiode and phototransistor
Nomenclature, basic ratings and properties of pipes and methods of measurement.
Semiconductor devices Part 5-7.Optoelectronic devices
Photodiodes and Phototransistors
1 Scope
This document specifies the terminology, basic ratings, and
characteristics and test methods.
This document applies to photodiodes and phototransistors.
2 Normative references
This document has no normative references.
3 Terms and definitions
The following terms and definitions apply to this document.
3.1 Physical Concepts
3.1.1
Radiation
a) Energy is emitted or propagated in the form of electromagnetic waves associated with photons.
b) Electromagnetic waves or photons.
[Source. GB/T 2900.65-2004,845-01-01, modified]
3.1.2
Optical radiation
Electromagnetic radiation with a wavelength between the transition region to X-rays (λ≈1nm) and the transition region to radio waves (λ≈1mm).
[Source. GB/T 2900.65-2004,845-01-02]
3.1.3
Visible radiation
Any optical radiation capable of directly causing vision.
NOTE. The spectral range of visible radiation has no definite limits, since it depends on the power of the radiation reaching the retina and the responsiveness of the observer.
Between 360nm and 400nm, with an upper limit between 760nm and 830nm.
[Source. GB/T 2900.65-2004,845-01-03]
3.1.4
infrared radiation
Optical radiation having a wavelength greater than that of visible radiation.
[Source. GB/T 2900.65-2004,845-01-04, modified]
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