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GB/T 1550-2018

Chinese Standard: 'GB/T 1550-2018'
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GB/T 1550-2018English249 Add to Cart Days<=3 Test methods for conductivity type of extrinsic semiconducting materials Valid GB/T 1550-2018
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Detail Information of GB/T 1550-2018; GB/T1550-2018
Description (Translated English): Test methods for conductivity type of extrinsic semiconducting materials
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: H21
Classification of International Standard: 77.040
Word Count Estimation: 14,114
Date of Issue: 2018-12-28
Date of Implementation: 2019-11-01
Older Standard (superseded by this standard): GB/T 1550-1997
Drafting Organization: Leshan Product Quality Supervision and Inspection Institute, China Institute of Metrology, Guangzhou Kunde Technology Co., Ltd., Semilebe Trading (Shanghai) Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Xinte Energy Co., Ltd., Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Silicon Semiconductor Materials Research Institute, Luoyang Zhongsi High-Tech Co., Ltd., Zhonghao Technology Co., Ltd., Yunnan Metallurgical Yunxin Silicon Material Co., Ltd., Jiangxi Saiwei LDK Solar High-Tech Co., Ltd., Beijing Heneng Sunshine New Energy Technology Co., Ltd
Administrative Organization: National Semiconductor Equipment and Materials Standardization Technical Committee
Proposing organization: National Standardization Management Committee


GB/T 1550-2018
Test methods for conductivity type of extrinsic semiconducting materials
ICS 77.040
H21
National Standards of People's Republic of China
Replace GB/T 1550-1997
Test method for conductivity type of extrinsic semiconductor materials
Published on.2018-12-28
2019-11-01 implementation
State market supervision and administration
China National Standardization Administration issued
Foreword
This standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 1550-1997 "Test method for conductivity type of extrinsic semiconductor materials", compared with GB/T 1550-1997
The main technical changes are as follows.
--- The scope of application was changed to "This standard applies to the testing of conductivity types of silicon and germanium non-intrinsic semiconductor materials, and other extrinsic semiconductors.
Materials can be tested with reference to this standard" (see Chapter 1, Chapter 1 of the.1997 edition);
--- Added terms and definitions (see Chapter 3);
--- Change the original standard 1.2~1.9 to "4.1 General" (see 4.1,.1997 version 1.2~1.9);
--- Revised the scope of application of Method A, Method D1, Method D2 (see 4.1.2, 4.1.5, 4.1.6,.1997, 1.3, 1.6, 1.7);
--- Added method E (surface photovoltage method) to test the conductivity type (see 4.1.7, 4.5, 5.5, 7.6, 9.5);
--- Added "If you use 9.1 ~ 9.5 test steps to obtain stable readings and good sensitivity, then the sample table
No stain or oxide layer on the surface. If the reading is unstable or the sensitivity is poor, it indicates that the surface of the sample has been stained or has an oxide layer.
The surface of the sample was treated by the method of 8.2. " (see 9.6);
--- Added analysis of test results (see Chapter 10).
This standard is supported by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and National Semiconductor Equipment and Materials Standards.
The Technical Subcommittee Materials Branch (SAC/TC203/SC2) jointly proposed and managed.
This standard was drafted. Leshan City Product Quality Supervision and Inspection Institute, China Institute of Metrology, Guangzhou Kunde Technology Co., Ltd.
Milliper Trading (Shanghai) Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Xinte Energy Co., Ltd., Jiangsu Zhongneng Silicon Technology Co., Ltd.
Exhibition Co., Ltd., Silicon Semiconductor Materials Research Institute, Luoyang Zhongsi High-Tech Co., Ltd., Zhonghao Technology Co., Ltd., Yunnan Metallurgical Cloud Silicon
Co., Ltd., Jiangxi Saiwei LDK Solar High-Tech Co., Ltd., Beijing Heineng Sunshine New Energy Technology Co., Ltd.
The main drafters of this standard. Liang Hong, Wang Ying, Zhao Xiaobin, Gao Ying, Wang Wei, Wang Feiqi, Huang Li, Xu Hongyu, Qiu Yanmei, Liu Xiaoxia, Yang Xu,
Zhang Yuanyuan, Liu Xinjun, Xu Yuanzhi, Cheng Xiaojuan, Pan Jinping, Xiao Zongjie.
The previous versions of the standards replaced by this standard are.
---GB 1550-1979, GB/T 1550-1997;
---GB 5256-1985.
Test method for conductivity type of extrinsic semiconductor materials
1 Scope
This standard specifies the test method for the conductivity type of extrinsic semiconductor materials.
This standard is applicable to the testing of conductivity types of silicon and germanium non-intrinsic semiconductor materials. Other extrinsic semiconductor materials may be tested with reference to this standard.
test. This standard method can ensure reliable results for uniform materials of the same conductivity type; for materials with non-uniform conductivity types,
Different conductive type regions are measured on the surface.
This standard does not apply to the testing of conductive types of layered structural materials such as epitaxial wafers.
2 Normative references
The following documents are indispensable for the application of this document. For dated references, only dated versions apply to this article.
Pieces. For undated references, the latest edition (including all amendments) applies to this document.
GB/T 1551 silicon single crystal resistivity determination method
GB/T 4326 extrinsic semiconductor single crystal Hall mobility and Hall coefficient measurement method
GB/T 14264 semiconductor material terminology
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Method summary
4.1 General
4.1.1 This standard includes five test methods. Method A---Thermal probe method; Method B---Cold probe method; Method C---Point contact rectification
Method; Method D---All-type method, including method D1---all types of rectification method, method D2---all types of thermoelectric potential method; method E---table
Surface light voltage method.
4.1.2 Method A. Applicable to N-type and P-type tantalum materials with a resistivity of 20 Ω·cm or less and N-type resistivity of 1000 Ω·cm or less
And P-type silicon material.
4.1.3 Method B. Applicable to N-type and P-type tantalum materials with a resistivity of 20 Ω·cm or less and N-type resistivity of 1000 Ω·cm or less
And P-type silicon material.
4.1.4 Method C. Applicable to N-type and P-type silicon materials with a resistivity of 1 Ω·cm to 1000 Ω·cm.
4.1.5 Method D1. Suitable for N-type and P-type tantalum materials with a resistivity of 1 Ω·cm~36 Ω·cm and a resistivity of 0.1 Ω·cm~
N-type and P-type silicon materials of 3000 Ω·cm.
4.1.6 Method D2. Applicable to N-type and P-type silicon materials with a resistivity of 0.2 Ω·cm to 1 Ω·cm.
4.1.7 Method E. Applicable to N-type and P-type silicon materials with a resistivity of 0.2 Ω·cm to 3000 Ω·cm.
4.1.8 Methods A to E may also be used to test extrinsic semiconductor materials beyond the scope defined in 4.1.2 to 4.1.7, but their applicability is not
Tested and verified.
Related standard:   GB/T 5167-2018  GB/T 2522-2017
   
 
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