GB/T 12963-2022_English: PDF (GB/T12963-2022)
Standard ID | Contents [version] | USD | STEP2 | [PDF] delivered in | Standard Title (Description) | Status | PDF |
GB/T 12963-2022 | English | 170 |
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Electronic-grade polycrystalline silicon
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GB/T 12963-2022
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GB/T 12963-2014 | English | 90 |
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Electronic-grade polycrystalline silicon
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GB/T 12963-2014
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GB/T 12963-2009 | English | 70 |
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Specification for polycrystalline silicon
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GB/T 12963-2009
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GB/T 12963-1996 | English | 239 |
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Polycrystalline silicon
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GB/T 12963-1996
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GB 12963-1991 | English | 199 |
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Polycrystalline silicon
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GB 12963-1991
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Standard ID | GB/T 12963-2022 (GB/T12963-2022) | Description (Translated English) | Electronic-grade polycrystalline silicon | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H82 | Classification of International Standard | 29.045 | Word Count Estimation | 10,173 | Date of Issue | 2022-12-30 | Date of Implementation | 2023-07-01 | Older Standard (superseded by this standard) | GB/T 12963-2014 | Drafting Organization | Jiangsu Xinhua Semiconductor Technology Co., Ltd., Nonferrous Metal Technology and Economic Research Institute Co., Ltd., Qinghai Yellow River Upstream Hydropower Development Co., Ltd. New Energy Branch, Jiangsu Zhongneng Silicon Industry Technology Development Co., Ltd., Youyan Semiconductor Silicon Materials Co., Ltd., Mask Electronic Materials Co., Ltd., Asia Silicon Industry (Qinghai) Co., Ltd., Shaanxi Nonferrous Tianhong Ruike Silicon Materials Co., Ltd., Xinte Energy Co., Ltd., Sichuan Yongxiang New Energy Co., Ltd., Shanghai Saift Semiconductor Materials Co., Ltd., Yichang CSG Silicon Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Luoyang Sinosilicon High-Tech Co., Ltd., Dongfang Electric (Leshan) Eban High-Purity Materials Co., Ltd. | Administrative Organization | National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Sub-Technical Committee (SAC/TC 203/SC 2) | Proposing organization | State Administration for Market Regulation, National Standardization Management Committee | Standard ID | GB/T 12963-2014 (GB/T12963-2014) | Description (Translated English) | Electronic-grade polycrystalline silicon | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H82 | Classification of International Standard | 29.045 | Word Count Estimation | 7,744 | Date of Issue | 2014/12/31 | Date of Implementation | 2015/9/1 | Older Standard (superseded by this standard) | GB/T 12963-2009 | Quoted Standard | GB/T 1550; GB/T 1551; GB/T 1553; GB/T 1557; GB/T 1558; GB/T 4059; GB/T 4060; GB/T 4061; GB/T 13389; GB/T 14264; GB/T 24574; GB/T 24581; GB/T 24582 | Drafting Organization | Emei Semiconductor Materials Institute | Administrative Organization | National Semiconductor Equipment and Materials Standardization Technical Committee; National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch | Regulation (derived from) | National Standards Bulletin 2014 No. 33 | Proposing organization | National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch (SAC/TC 203/SC 2) | Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China | Summary | This Standard specifies the polysilicon requirements, test methods, inspection rules and signs, packaging, transportation, storage, quality certificates and orders (or contract) content. This Standard applies to chlorine, silane obtained polysilicon. | Standard ID | GB/T 12963-2009 (GB/T12963-2009) | Description (Translated English) | Specification for polycrystalline silicon | Sector / Industry | National Standard (Recommended) | Classification of Chinese Standard | H82 | Classification of International Standard | 29.045 | Word Count Estimation | 6,677 | Date of Issue | 2009-10-30 | Date of Implementation | 2010-06-01 | Older Standard (superseded by this standard) | GB/T 12963-1996 | Quoted Standard | GB/T 1550; GB/T 1553; GB/T 1558; GB/T 4059; GB/T 4060; GB/T 4061; GB/T 13389; GB/T 14264; ASTM F1723 | Adopted Standard | SEMI M16-1103-2003, MOD | Drafting Organization | Emei Semiconductor Material Factory | Administrative Organization | National Technical Committee of Standardization of equipment and materials Technical Committee semiconductors and | Regulation (derived from) | National Standard Approval Announcement 2009 No.12 (Total No.152); National Standard Announcement 2014 No.33 | Proposing organization | National Standardization Technical Committee of semiconductor equipment and materials | Issuing agency(ies) | Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China; Standardization Administration of China | Summary | This standard specifies the polycrystalline silicon product categories, technical requirements, test methods, trial rules and signs, transportation and storage. This standard applies to trichlorosilane or silicon tetrachloride, hydrogen reduction method were polycrystalline silicon. |
GB/T 12963-2022
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 29.045
CCS H 82
Replacing GB/T 12963-2014
Electronic-Grade Polycrystalline Silicon
ISSUED ON: DECEMBER 30, 2022
IMPLEMENTED ON: JULY 1, 2023
Issued by: State Administration for Market Regulation;
Standardization Administration of the People’s Republic of China.
Table of Contents
Foreword ... 3
1 Scope ... 5
2 Normative References ... 5
3 Terms and Definitions ... 6
4 Designation and Category ... 6
5 Technical Requirements ... 6
6 Test Methods ... 8
7 Inspection Rules ... 9
8 Marking, Packaging, Transportation, Storage and Accompanying Documents ... 10
9 Contents of Order Form ... 11
Electronic-Grade Polycrystalline Silicon
1 Scope
This Document stipulates the designations and categories, technical requirements, test methods,
inspection rules, marking, packaging, transportation, storage, accompanying documents and
order form content of electronic grade polycrystalline silicon.
This Document applies to electronic grade polycrystalline silicon (hereinafter referred to as
"polycrystalline silicon") produced from chlorosilane and silane.
2 Normative References
The provisions in following documents become the essential provisions of this Document
through reference in this Document. For the dated documents, only the versions with the dates
indicated are applicable to this Document; for the undated documents, only the latest version
(including all the amendments) is applicable to this Document.
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551 Test method for measuring resistivity of monocrystal silicon - In-line four-
point probe and direct current two-point probe method
GB/T 1553 Test methods for minority carrier lifetime in bulk silicon and germanium -
Photoconductivity decay method
GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared
absorption
GB/T 1558 Test method for substitutional carbon content in silicon by infrared absorption
GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on phosphorus
under controlled atmosphere
GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting on boron
GB/T 4061 Polycrystalline silicon - examination method - assessment of sandwiches on
cross-section by chemical corrosion
GB/T 14264 Terminology of semiconductor materials
GB/T 14844 Designations of semiconductor materials
GB/T 24574 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-
Ⅴ impurities
GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon - Low
temperature FT-IR analysis method
GB/T 24582 Test method for measuring surface metal contamination of polycrystalline
silicon by acid extraction-inductively coupled plasma mass spectrometry
GB/T 29057 Practice for evaluation of polycrystalline silicon rods by float-zone crystal
growth and spectroscopy
GB/T 35306 Test method for carbon and oxygen content of single crystal silicon―Low
temperature Fourier transform infrared spectrometry
GB/T 37049 Test method for the content of metal impurity in electronic grade polysilicon
- Inductively coupled-plasma mass spectrometry method
3 Terms and Definitions
For the purposes of this Document, the terms and definitions given in GB/T 14264 apply.
4 Designation and Category
4.1 The designation indication of polycrystalline silicon shall comply with the provisions of
GB/T 14844.
4.2 Polycrystalline silicon is divided into bulk polycrystalline silicon and rod-shaped
polycrystalline silicon according to the shape; n-type and p-type according to the conductivity
type; and is divided into 4 grades according to the difference in technical indicators.
5 Technical Requirements
5.1 Technical indicators
The grade and related technical indicators of polycrystalline silicon shall comply with the
provisions of Table 1.
6 Test Methods
6.1 Before testing polycrystalline silicon for donor impurity content, acceptor impurity content,
carbon content, conductivity type, resistivity, minority carrier lifetime, and oxygen content, the
polycrystalline silicon shall be made into a monocrystalline specimen according to the methods
in GB/T 4059, GB/T 4060 or GB/T 29057.
6.2 The inspection of donor impurity content and acceptor impurity content in polycrystalline
silicon shall be carried out in accordance with the provisions of GB/T 24574 or GB/T 24581.
The arbitration inspection shall be carried out in accordance with the provisions of GB/T 24581.
6.3 The inspection of carbon content in polycrystalline silicon shall be carried out in accordance
with the provisions of GB/T 1558 or GB/T 35306. The arbitration inspection shall be carried
out in accordance with the provisions of GB/T 35306.
6.4 The inspection of the basis metal impurity content of the polycrystalline silicon shall be
carried out in accordance with the provisions of GB/T 37049.
6.5 The inspection of surface metal impurity content of polycrystalline silicon shall be carried
out in accordance with the provisions of GB/T 24582.
6.6 The inspection of conductivity type of polycrystalline silicon shall be carried out in
accordance with the provisions of GB/T 1550.
6.7 The inspection of resistivity of polycrystalline silicon shall be carried out in accordance
with the provisions of GB/T 1551.
6.8 The inspection of minority carrier lifetime of polycrystalline silicon shall be carried out in
accordance with the provisions of GB/T 1553.
6.9 The inspection of oxygen content of polycrystalline silicon shall be carried out in
accordance with the provisions of GB/T 1557 or GB/T 35306. The arbitration inspection shall
be carried out in accordance with the provisions of GB/T 35306.
6.10 The size distribution range of bulk polycrystalline silicon is tested by screening. The
dimensions and deviations of rod-shaped polycrystalline silicon are measured with measuring
tools of corresponding accuracy.
6.11 The inspection of polycrystalline silicon structure (oxidation interlayer, temperature
interlayer) shall be carried out in accordance with the provisions of GB/T 4061.
6.12 The particle size of the cross-section edge of polycrystalline silicon shall be measured with
measuring tools of corresponding accuracy, and other surface quality shall be visually inspected.
and surface metal impurity content, double sampling shall be required to be taken for that
unqualified item for reinspection. If the reinspection results are still unqualified, the batch of
products shall be deemed to be unqualified.
7.5.2 The judgment of conductivity type, resistivity, minority carrier lifetime, oxygen content,
size and tolerance, structure, and surface quality inspection results shall be determined through
negotiation between the supplier and the purchaser.
8 Marking, Packaging, Transportation, Storage and
Accompanying Documents
8.1 Marking
The outside of the product packaging box shall be marked with the words or signs of "Handle
with Care" and "Moisture-proof", and indicate:
a) Product name and designation;
b) Product quantity and net weight;
c) Name of supplier.
8.2 Packaging
The product is packed into clean polyethylene packaging bags and sealed. When packaging,
the polyethylene packaging bag shall be prevented from being damaged to avoid external
contamination of the product; and good protection shall be provided before being packed into
the outer packaging box. The packaging of polycrystalline silicon can also be determined
through negotiation between the supplier and the purchaser.
8.3 Transportation
During transportation, products shall be loaded and unloaded with care, not pressed or squeezed,
and shock-proof measures shall be taken.
8.4 Storage
Product shall be stored in a clean and dry environment.
8.5 Accompanying documents
Each batch of products shall be accompanied by accompanying documents, which shall include
the following contents in addition to supplier information, product information, this Document
number, exit-factory date or packaging date.
......
GB/T 12963-2014
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 29.045
H 82
Replacing GB/T 12963-2009
Electronic-grade Polycrystalline Silicon
ISSUED ON. DECEMBER 31, 2014
IMPLEMENTED ON. SEPTEMBER 1, 2015
Issued by.
General Administration of Quality Supervision, Inspection
and Quarantine of the People’s Republic of China;
Standardization Administration of the People’s Republic of
China.
Table of Contents
Foreword ... 3
1 Scope ... 4
2 Normative references ... 4
3 Terms and definitions ... 5
4 Requirements ... 5
5 Testing Method ... 7
6 Inspection Rules ... 8
7 Mark, Package, Transportation and Storage ... 9
8 Content of Order List (or Contract) ... 10
Foreword
This Standard was drafted in accordance with the rules given in GB/T 1.1-2009.
This Standard replaces GB/T 12963-2009 "Polycrystalline silicon". Compared with GB/T
12963-2009, the main changes of this Standard are as follows.
- Add the reference national standards GB/T 1551, GB/T 1557, GB/T 24574, GB/T
24581 and GB/T 24582 (see Chapter 2);
- Add polycrystalline silicon’s technical parameters, including the requirements of donor
impurity concentration, acceptor impurity concentration, oxygen concentration,
substrate metal impurity concentration, surface metal impurity concentration (see
Table 1);
- For different grade of polycrystalline silicon, the carbon concentration is revised
FROM < 1.5 × 1015 atoms / cm3, < 2 × 1016 atoms/cm3, < 2 × 1016 atoms/cm3 TO < 4.0 ×
1016 atoms/cm3, < 1.0 × 1016 atoms/cm3, < 1.5 × 1016 atoms/cm3 respectively (see
Table 1).
Please note that some of the content of this document may involve patents. The issuing
agency of this document do not undertake the responsibility to identify these patents.
This Standard was jointly proposed by and shall be under the jurisdiction of National
Standardization Technical Committee of Semiconductor Equipment and Materials
(SAC/TC 203) AND National Standardization Technical Committee of Semiconductor
Equipment and Materials – Material Sub-committee (SAC/TC 203/SC 2).
Drafting organizations of this Standard. Emei Semiconductor Materials Research Institute,
Sichuan Xinguang Silicon Technology Co., Ltd., Youyan Semiconductor Materials Co.,
Ltd., Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Xinte Energy Co., Ltd.
AND Luoyang Sino-silicon High-tech Co,. Ltd.
The drafters of this Standard. Zhan Ke, Yang, Zhong Na, Li Yawen, Liang Hong, Sun Yan,
Liu Xiaoxia, Yin Bo, Gan Xinye and Yan Dazhou.
The previous editions replaced by this Standard are as follows.
- GB/T 12963-1991, GB/T 12963-1996, GB/T 12963-2009.
Specification for Polycrystalline Silicon
1 Scope
This Standard specifies polycrystalline silicon’s requirements, test methods,
inspection rules, mark, transportation, storage, quality certificate and order list (or
contract).
This Standard is applicable to the polycrystalline silicon which is manufactured from
chlorosilane and silane.
2 Normative references
The following documents contain provisions which, through reference in this text,
constitute the provisions of this Standard. For dated reference, the subsequent
amendments (excluding corrigendum) or revisions of these publications do not apply.
For undated references, the latest edition of the normative document is applicable to
this Standard.
GB/T 1550 Standard methods for measuring conductivity type of extrinsic
semiconducting materials
GB/T 1551 Test method for measuring resistivity of monocrystal silicon
GB/T 1553 Test methods for minority carrier lifetime in bulk germanium and
silicon by measurement of photoconductivity decay
GB/T 1557 The method of determining interstitial oxygen content in silicon by
infrared absorption
GB/T 1558 Test method for substitutional atomic carbon content of silicon by
infrared absorption
GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on
phosphorus under controlled atmosphere
GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting
on boron
GB/T 4061 Polycrystalline silicon - Examination method - Assessment of
sandwiches on cross-section by chemical corrosion
GB/T 13389 Practice for conversion between resistivity and dopant density for
determined by the negotiation of the supplier and purchaser.
6.5 Determination of inspection result
6.5.1 The grade of polycrystalline silicon shall be determined by donor impurity
concentration, acceptor impurity concentration, carbon concentration, oxygen
concentration, surface metal impurity concentration and substrate metal impurity
concentration. If one item of the inspection results is unqualified, then the doubling
sampling is required to be carried out for the re-inspection of the unqualified item(s). If
it is still unqualified, then this batch of products are deemed as unqualified.
6.5.2 The determination of inspection result of conduction type, minority carrier
lifetime, resistivity, dimension and allowable deviation, structure and appearance
quality shall be determined by negotiation of the supplier and purchaser.
7 Mark, Package, Transportation and Storage
7.1 Mark
The wordings or marks such as "Handle with Care", "Keep Away From Corrosion,
Keep Away from Moisture" shall be marked on the packing box, and indicate.
a) Purchaser’s name;
b) Product name, designation;
c) Number of packages and net weight of the product;
d) Supplier’s name.
7.2 Packaging
The polycrystalline silicon shall be packed into a clean polyethylene packaging bag
after it is cleaned and dried in a certain way; then the packaging bag shall be packed
into a packing box. It is required to protect the polyethylene packaging bag from
breakage while packing, so as to avoid the foreign contamination to the product; the
good protection shall be provided in an optimal placing way. The packing of
polycrystalline silicon can also be negotiated by the supplier and purchaser.
7.3 Transport
The product shall be loaded and unloaded carefully during the transport process; do
not press and shove it, and adopt the vibration-proof measures.
7.4 Storage
The product shall be stored in a clean and dry environment.
7.5 Quality certificate
Each batch of product shall be accompanied by a quality certificate, and noted with.
a) Supplier’s name;
b) Product name and designation;
c) Product batch number;
d) The gross weight and net weight of product;
e) Stamps of each-item inspection result and inspection department;
f) Serial number of this Standard;
g) Date of exit-factory.
8 Content of Order List (or Contract)
The following contents shall be included in the order list of specified products in this
Standard.
a) Product name and designation;
b) Serial number of this Standard;
c) The content negotiated by the supplier and purchaser in this Standard;
d) Other.
......
GB/T 12963-2009
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 29.045
H 82
Replacing GB/T 12963-1996
Specification for Polycrystalline Silicon
硅多晶
ISSUED ON. OCTOBER 30, 2009
IMPLEMENTED ON. JUNE 1, 2010
Issued by.
General Administration of Quality Supervision, Inspection
and Quarantine of the People’s Republic of China;
Standardization Administration of the People’s Republic of
China.
Table of Contents
Foreword ... 3
1 Scope ... 4
2 Normative references ... 4
3 Terms ... 5
4 Requirements ... 5
5 Testing Method ... 6
6 Inspection Rules ... 7
7 Mark, Package, Transportation and Storage ... 8
8 Content of Order ... 9
Foreword
This Standard modifies and adopts SEMI M16-1103.2003 “Specification for
Polycrystalline Silicon”. The main differences are as follows.
-- add the technical parameters, such as the grade requirements of phosphine
resistivity, boron resistivity, concentration of carbon as well as n-type minority
carrier lifetime;
-- add the size range requirements for polycrystalline silicon.
This Standard replaces GB/T 12963-1996 “Polycrystalline Silicon”.
Compared with GB/T 12963-1996, the main changes of this Standard are as follows.
-- revise the phosphine resistivity grades from 300Ω•cm, 200Ω•cm, 100Ω•cm to be
500Ω•cm, 300Ω•cm, 200Ω•cm;
-- add a term of oxide lamella.
This Standard was proposed by National Standardization Technical Committee for
Semiconductor Equipment and Materials.
This Standard shall be under the jurisdiction of Material Technical Committee of
National Standardization Technical Committee for Semiconductor Equipment and
Materials.
The drafting organization of this Standard. Emei Semiconductor Material Plant.
Main drafters of this Standard. Luo Liping, Zhang Huijian and Wang Yan.
The previous editions replaced by this Standard are as follows.
-- GB/T 12963-1991, GB/T 12963-1996.
Specification for Polycrystalline Silicon
1 Scope
This Standard specifies the product classification, technical requirements, test
methods, inspection rules, mark, transportation as well as storage for the
polycrystalline silicon.
The polycrystalline silicon, which is manufactured from trichlorosilane or silicon
tetrachloride by hydrogen reduction method, is applicable to this Standard.
2 Normative references
The following documents contain provisions which, through reference in this text,
constitute the provisions of this Standard. For dated reference, the subsequent
amendments (excluding corrigendum) or revisions of these publications do not apply.
However, all parties who reach an agreement according to this Standard are
encouraged to study whether the latest edition of these documents is applicable. For
undated references, the latest edition of the normative document is applicable to this
Standard.
GB/T 1550 Standard methods for measuring conductivity type of extrinsic
semiconducting materials
GB/T 1553 Test methods for minority carrier lifetime in bulk germanium and
silicon by measurement of photoconductivity decay
GB/T 1558 Test method for substitutional atomic carbon content of silicon by
infrared absorption
GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on
phosphorus under controlled atmosphere
GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting
on boron
GB/T 4061 Polycrystalline silicon - Examination method - Assessment of
sandwiches on cross-section by chemical corrosion
GB/T 13389 Practice for conversion between resistivity and dopant density for
boron-doped and phosphorus-doped silicon
6.3 Inspection item
The phosphine resistivity, boron resistivity, n-type minority carrier lifetime,
concentration of carbon, structure surface quality and dimension shall be inspected
for each batch of product.
6.4 Sample collection and sample preparation
6.4.1 When the supplier is processing the "sample collection" and "sample
preparation", the sample collection and sample preparation of phosphine resistivity
and boron resistivity shall be carried out according to the requirements of GB/T 4059
and GB/T 4060; the sample collection and sample preparation of section oxide
lamella shall be carried out according to the requirements of GB/T 4061.
6.4.2 The sampling scheme for the arbitration shall be agreed by the supplier and
purchaser; the sampling location and sample preparation shall be carried out
according to 7.4.1.
6.5 Determination of inspection result
If one item of the inspection results is unqualified, then the doubling sampling is
required to be carried out for the re-inspection of the unqualified item(s). If it is still
unqualified, then this batch of products are deemed as unqualified.
7 Mark, Package, Transportation and Storage
7.1 The polycrystalline silicon shall be packed into a clean polyethylene packaging
bag after it is cleaned and dried in a certain way; then the packaging bag shall be
packed into a packing box. As for the block-shaped polycrystalline silicon, the net
weight of each bag shall be 2000 g±20 g, 5000 g±50 g, 10000 g±100g. Each stick of
club-shaped polycrystalline silicon shall be packed independently. It is required to
protect the polyethylene packaging bag from breakage while packing, so as to avoid
the foreign contamination to the product; the good protection shall be provided in an
optimal placing way.
7.2 The wordings or marks such as "Handle with Care", "Keep Away From
Corrosion, Keep Away from Moisture" shall be marked on the packing box, and
indicate.
A) Purchaser’s name;
B) Product name, designation;
C) Number of packages and net weight of the product;
D) Supplier’s name.
7.3 Each batch of product shall be accompanied by a Certification of Quality, and
noted with.
A) Supplier’s name;
B) Product name and designation;
C) Lot identification mark;
D) The gross weight and net weight of product;
E) Stamps of each inspection result and inspection department;
F) Serial number of this Standard;
G) Date of exit-factory.
7.4 The product shall be loaded and unloaded carefully during the transport process;
do not press and shove it, and adopt the vibration-proof measures.
7.5 The product shall be stored in a clean and dry environment.
8 Content of Order
The following contents shall be included in the order of specified products in this
Standard.
A) Product designation;
B) Serial number of this Standard;
C) Other.
......
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