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GB/T 12963-2022 English PDF (GB/T 12963-2014, GB/T 12963-2009)

GB/T 12963-2022_English: PDF (GB/T12963-2022)
Standard IDContents [version]USDSTEP2[PDF] delivered inStandard Title (Description)StatusPDF
GB/T 12963-2022English170 Add to Cart 0--9 seconds. Auto-delivery Electronic-grade polycrystalline silicon Valid GB/T 12963-2022
GB/T 12963-2014English90 Add to Cart 0--9 seconds. Auto-delivery Electronic-grade polycrystalline silicon Obsolete GB/T 12963-2014
GB/T 12963-2009English70 Add to Cart 0--9 seconds. Auto-delivery Specification for polycrystalline silicon Obsolete GB/T 12963-2009
GB/T 12963-1996English239 Add to Cart 2 days [Need to translate] Polycrystalline silicon Obsolete GB/T 12963-1996
GB 12963-1991English199 Add to Cart 2 days [Need to translate] Polycrystalline silicon Obsolete GB 12963-1991


BASIC DATA
Standard ID GB/T 12963-2022 (GB/T12963-2022)
Description (Translated English) Electronic-grade polycrystalline silicon
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H82
Classification of International Standard 29.045
Word Count Estimation 10,173
Date of Issue 2022-12-30
Date of Implementation 2023-07-01
Older Standard (superseded by this standard) GB/T 12963-2014
Drafting Organization Jiangsu Xinhua Semiconductor Technology Co., Ltd., Nonferrous Metal Technology and Economic Research Institute Co., Ltd., Qinghai Yellow River Upstream Hydropower Development Co., Ltd. New Energy Branch, Jiangsu Zhongneng Silicon Industry Technology Development Co., Ltd., Youyan Semiconductor Silicon Materials Co., Ltd., Mask Electronic Materials Co., Ltd., Asia Silicon Industry (Qinghai) Co., Ltd., Shaanxi Nonferrous Tianhong Ruike Silicon Materials Co., Ltd., Xinte Energy Co., Ltd., Sichuan Yongxiang New Energy Co., Ltd., Shanghai Saift Semiconductor Materials Co., Ltd., Yichang CSG Silicon Materials Co., Ltd., Zhejiang Haina Semiconductor Co., Ltd., Luoyang Sinosilicon High-Tech Co., Ltd., Dongfang Electric (Leshan) Eban High-Purity Materials Co., Ltd.
Administrative Organization National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Sub-Technical Committee (SAC/TC 203/SC 2)
Proposing organization State Administration for Market Regulation, National Standardization Management Committee

BASIC DATA
Standard ID GB/T 12963-2014 (GB/T12963-2014)
Description (Translated English) Electronic-grade polycrystalline silicon
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H82
Classification of International Standard 29.045
Word Count Estimation 7,744
Date of Issue 2014/12/31
Date of Implementation 2015/9/1
Older Standard (superseded by this standard) GB/T 12963-2009
Quoted Standard GB/T 1550; GB/T 1551; GB/T 1553; GB/T 1557; GB/T 1558; GB/T 4059; GB/T 4060; GB/T 4061; GB/T 13389; GB/T 14264; GB/T 24574; GB/T 24581; GB/T 24582
Drafting Organization Emei Semiconductor Materials Institute
Administrative Organization National Semiconductor Equipment and Materials Standardization Technical Committee; National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch
Regulation (derived from) National Standards Bulletin 2014 No. 33
Proposing organization National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC 203), National Semiconductor Equipment and Materials Standardization Technical Committee Materials Branch (SAC/TC 203/SC 2)
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This Standard specifies the polysilicon requirements, test methods, inspection rules and signs, packaging, transportation, storage, quality certificates and orders (or contract) content. This Standard applies to chlorine, silane obtained polysilicon.

BASIC DATA
Standard ID GB/T 12963-2009 (GB/T12963-2009)
Description (Translated English) Specification for polycrystalline silicon
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard H82
Classification of International Standard 29.045
Word Count Estimation 6,677
Date of Issue 2009-10-30
Date of Implementation 2010-06-01
Older Standard (superseded by this standard) GB/T 12963-1996
Quoted Standard GB/T 1550; GB/T 1553; GB/T 1558; GB/T 4059; GB/T 4060; GB/T 4061; GB/T 13389; GB/T 14264; ASTM F1723
Adopted Standard SEMI M16-1103-2003, MOD
Drafting Organization Emei Semiconductor Material Factory
Administrative Organization National Technical Committee of Standardization of equipment and materials Technical Committee semiconductors and
Regulation (derived from) National Standard Approval Announcement 2009 No.12 (Total No.152); National Standard Announcement 2014 No.33
Proposing organization National Standardization Technical Committee of semiconductor equipment and materials
Issuing agency(ies) Administration of Quality Supervision, Inspection and Quarantine of People's Republic of China; Standardization Administration of China
Summary This standard specifies the polycrystalline silicon product categories, technical requirements, test methods, trial rules and signs, transportation and storage. This standard applies to trichlorosilane or silicon tetrachloride, hydrogen reduction method were polycrystalline silicon.


GB/T 12963-2022 GB NATIONAL STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 29.045 CCS H 82 Replacing GB/T 12963-2014 Electronic-Grade Polycrystalline Silicon ISSUED ON: DECEMBER 30, 2022 IMPLEMENTED ON: JULY 1, 2023 Issued by: State Administration for Market Regulation; Standardization Administration of the People’s Republic of China. Table of Contents Foreword ... 3 1 Scope ... 5 2 Normative References ... 5 3 Terms and Definitions ... 6 4 Designation and Category ... 6 5 Technical Requirements ... 6 6 Test Methods ... 8 7 Inspection Rules ... 9 8 Marking, Packaging, Transportation, Storage and Accompanying Documents ... 10 9 Contents of Order Form ... 11 Electronic-Grade Polycrystalline Silicon 1 Scope This Document stipulates the designations and categories, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents and order form content of electronic grade polycrystalline silicon. This Document applies to electronic grade polycrystalline silicon (hereinafter referred to as "polycrystalline silicon") produced from chlorosilane and silane. 2 Normative References The provisions in following documents become the essential provisions of this Document through reference in this Document. For the dated documents, only the versions with the dates indicated are applicable to this Document; for the undated documents, only the latest version (including all the amendments) is applicable to this Document. GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551 Test method for measuring resistivity of monocrystal silicon - In-line four- point probe and direct current two-point probe method GB/T 1553 Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558 Test method for substitutional carbon content in silicon by infrared absorption GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on phosphorus under controlled atmosphere GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting on boron GB/T 4061 Polycrystalline silicon - examination method - assessment of sandwiches on cross-section by chemical corrosion GB/T 14264 Terminology of semiconductor materials GB/T 14844 Designations of semiconductor materials GB/T 24574 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ- Ⅴ impurities GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon - Low temperature FT-IR analysis method GB/T 24582 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry GB/T 29057 Practice for evaluation of polycrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 35306 Test method for carbon and oxygen content of single crystal silicon―Low temperature Fourier transform infrared spectrometry GB/T 37049 Test method for the content of metal impurity in electronic grade polysilicon - Inductively coupled-plasma mass spectrometry method 3 Terms and Definitions For the purposes of this Document, the terms and definitions given in GB/T 14264 apply. 4 Designation and Category 4.1 The designation indication of polycrystalline silicon shall comply with the provisions of GB/T 14844. 4.2 Polycrystalline silicon is divided into bulk polycrystalline silicon and rod-shaped polycrystalline silicon according to the shape; n-type and p-type according to the conductivity type; and is divided into 4 grades according to the difference in technical indicators. 5 Technical Requirements 5.1 Technical indicators The grade and related technical indicators of polycrystalline silicon shall comply with the provisions of Table 1. 6 Test Methods 6.1 Before testing polycrystalline silicon for donor impurity content, acceptor impurity content, carbon content, conductivity type, resistivity, minority carrier lifetime, and oxygen content, the polycrystalline silicon shall be made into a monocrystalline specimen according to the methods in GB/T 4059, GB/T 4060 or GB/T 29057. 6.2 The inspection of donor impurity content and acceptor impurity content in polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 24574 or GB/T 24581. The arbitration inspection shall be carried out in accordance with the provisions of GB/T 24581. 6.3 The inspection of carbon content in polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1558 or GB/T 35306. The arbitration inspection shall be carried out in accordance with the provisions of GB/T 35306. 6.4 The inspection of the basis metal impurity content of the polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 37049. 6.5 The inspection of surface metal impurity content of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 24582. 6.6 The inspection of conductivity type of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1550. 6.7 The inspection of resistivity of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1551. 6.8 The inspection of minority carrier lifetime of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1553. 6.9 The inspection of oxygen content of polycrystalline silicon shall be carried out in accordance with the provisions of GB/T 1557 or GB/T 35306. The arbitration inspection shall be carried out in accordance with the provisions of GB/T 35306. 6.10 The size distribution range of bulk polycrystalline silicon is tested by screening. The dimensions and deviations of rod-shaped polycrystalline silicon are measured with measuring tools of corresponding accuracy. 6.11 The inspection of polycrystalline silicon structure (oxidation interlayer, temperature interlayer) shall be carried out in accordance with the provisions of GB/T 4061. 6.12 The particle size of the cross-section edge of polycrystalline silicon shall be measured with measuring tools of corresponding accuracy, and other surface quality shall be visually inspected. and surface metal impurity content, double sampling shall be required to be taken for that unqualified item for reinspection. If the reinspection results are still unqualified, the batch of products shall be deemed to be unqualified. 7.5.2 The judgment of conductivity type, resistivity, minority carrier lifetime, oxygen content, size and tolerance, structure, and surface quality inspection results shall be determined through negotiation between the supplier and the purchaser. 8 Marking, Packaging, Transportation, Storage and Accompanying Documents 8.1 Marking The outside of the product packaging box shall be marked with the words or signs of "Handle with Care" and "Moisture-proof", and indicate: a) Product name and designation; b) Product quantity and net weight; c) Name of supplier. 8.2 Packaging The product is packed into clean polyethylene packaging bags and sealed. When packaging, the polyethylene packaging bag shall be prevented from being damaged to avoid external contamination of the product; and good protection shall be provided before being packed into the outer packaging box. The packaging of polycrystalline silicon can also be determined through negotiation between the supplier and the purchaser. 8.3 Transportation During transportation, products shall be loaded and unloaded with care, not pressed or squeezed, and shock-proof measures shall be taken. 8.4 Storage Product shall be stored in a clean and dry environment. 8.5 Accompanying documents Each batch of products shall be accompanied by accompanying documents, which shall include the following contents in addition to supplier information, product information, this Document number, exit-factory date or packaging date. ......


GB/T 12963-2014 GB NATIONAL STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 29.045 H 82 Replacing GB/T 12963-2009 Electronic-grade Polycrystalline Silicon ISSUED ON. DECEMBER 31, 2014 IMPLEMENTED ON. SEPTEMBER 1, 2015 Issued by. General Administration of Quality Supervision, Inspection and Quarantine of the People’s Republic of China; Standardization Administration of the People’s Republic of China. Table of Contents Foreword ... 3  1  Scope ... 4  2  Normative references ... 4  3 Terms and definitions ... 5  4 Requirements ... 5  5 Testing Method ... 7  6 Inspection Rules ... 8  7 Mark, Package, Transportation and Storage ... 9  8 Content of Order List (or Contract) ... 10  Foreword This Standard was drafted in accordance with the rules given in GB/T 1.1-2009. This Standard replaces GB/T 12963-2009 "Polycrystalline silicon". Compared with GB/T 12963-2009, the main changes of this Standard are as follows. - Add the reference national standards GB/T 1551, GB/T 1557, GB/T 24574, GB/T 24581 and GB/T 24582 (see Chapter 2); - Add polycrystalline silicon’s technical parameters, including the requirements of donor impurity concentration, acceptor impurity concentration, oxygen concentration, substrate metal impurity concentration, surface metal impurity concentration (see Table 1); - For different grade of polycrystalline silicon, the carbon concentration is revised FROM < 1.5 × 1015 atoms / cm3, < 2 × 1016 atoms/cm3, < 2 × 1016 atoms/cm3 TO < 4.0 × 1016 atoms/cm3, < 1.0 × 1016 atoms/cm3, < 1.5 × 1016 atoms/cm3 respectively (see Table 1). Please note that some of the content of this document may involve patents. The issuing agency of this document do not undertake the responsibility to identify these patents. This Standard was jointly proposed by and shall be under the jurisdiction of National Standardization Technical Committee of Semiconductor Equipment and Materials (SAC/TC 203) AND National Standardization Technical Committee of Semiconductor Equipment and Materials – Material Sub-committee (SAC/TC 203/SC 2). Drafting organizations of this Standard. Emei Semiconductor Materials Research Institute, Sichuan Xinguang Silicon Technology Co., Ltd., Youyan Semiconductor Materials Co., Ltd., Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Xinte Energy Co., Ltd. AND Luoyang Sino-silicon High-tech Co,. Ltd. The drafters of this Standard. Zhan Ke, Yang, Zhong Na, Li Yawen, Liang Hong, Sun Yan, Liu Xiaoxia, Yin Bo, Gan Xinye and Yan Dazhou. The previous editions replaced by this Standard are as follows. - GB/T 12963-1991, GB/T 12963-1996, GB/T 12963-2009. Specification for Polycrystalline Silicon 1 Scope This Standard specifies polycrystalline silicon’s requirements, test methods, inspection rules, mark, transportation, storage, quality certificate and order list (or contract). This Standard is applicable to the polycrystalline silicon which is manufactured from chlorosilane and silane. 2 Normative references The following documents contain provisions which, through reference in this text, constitute the provisions of this Standard. For dated reference, the subsequent amendments (excluding corrigendum) or revisions of these publications do not apply. For undated references, the latest edition of the normative document is applicable to this Standard. GB/T 1550 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1551 Test method for measuring resistivity of monocrystal silicon GB/T 1553 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1557 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1558 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on phosphorus under controlled atmosphere GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting on boron GB/T 4061 Polycrystalline silicon - Examination method - Assessment of sandwiches on cross-section by chemical corrosion GB/T 13389 Practice for conversion between resistivity and dopant density for determined by the negotiation of the supplier and purchaser. 6.5 Determination of inspection result 6.5.1 The grade of polycrystalline silicon shall be determined by donor impurity concentration, acceptor impurity concentration, carbon concentration, oxygen concentration, surface metal impurity concentration and substrate metal impurity concentration. If one item of the inspection results is unqualified, then the doubling sampling is required to be carried out for the re-inspection of the unqualified item(s). If it is still unqualified, then this batch of products are deemed as unqualified. 6.5.2 The determination of inspection result of conduction type, minority carrier lifetime, resistivity, dimension and allowable deviation, structure and appearance quality shall be determined by negotiation of the supplier and purchaser. 7 Mark, Package, Transportation and Storage 7.1 Mark The wordings or marks such as "Handle with Care", "Keep Away From Corrosion, Keep Away from Moisture" shall be marked on the packing box, and indicate. a) Purchaser’s name; b) Product name, designation; c) Number of packages and net weight of the product; d) Supplier’s name. 7.2 Packaging The polycrystalline silicon shall be packed into a clean polyethylene packaging bag after it is cleaned and dried in a certain way; then the packaging bag shall be packed into a packing box. It is required to protect the polyethylene packaging bag from breakage while packing, so as to avoid the foreign contamination to the product; the good protection shall be provided in an optimal placing way. The packing of polycrystalline silicon can also be negotiated by the supplier and purchaser. 7.3 Transport The product shall be loaded and unloaded carefully during the transport process; do not press and shove it, and adopt the vibration-proof measures. 7.4 Storage The product shall be stored in a clean and dry environment. 7.5 Quality certificate Each batch of product shall be accompanied by a quality certificate, and noted with. a) Supplier’s name; b) Product name and designation; c) Product batch number; d) The gross weight and net weight of product; e) Stamps of each-item inspection result and inspection department; f) Serial number of this Standard; g) Date of exit-factory. 8 Content of Order List (or Contract) The following contents shall be included in the order list of specified products in this Standard. a) Product name and designation; b) Serial number of this Standard; c) The content negotiated by the supplier and purchaser in this Standard; d) Other. ......


GB/T 12963-2009 GB NATIONAL STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 29.045 H 82 Replacing GB/T 12963-1996 Specification for Polycrystalline Silicon 硅多晶 ISSUED ON. OCTOBER 30, 2009 IMPLEMENTED ON. JUNE 1, 2010 Issued by. General Administration of Quality Supervision, Inspection and Quarantine of the People’s Republic of China; Standardization Administration of the People’s Republic of China. Table of Contents Foreword ... 3  1  Scope ... 4  2  Normative references ... 4  3  Terms ... 5  4 Requirements ... 5  5 Testing Method ... 6  6 Inspection Rules ... 7  7 Mark, Package, Transportation and Storage ... 8  8 Content of Order ... 9  Foreword This Standard modifies and adopts SEMI M16-1103.2003 “Specification for Polycrystalline Silicon”. The main differences are as follows. -- add the technical parameters, such as the grade requirements of phosphine resistivity, boron resistivity, concentration of carbon as well as n-type minority carrier lifetime; -- add the size range requirements for polycrystalline silicon. This Standard replaces GB/T 12963-1996 “Polycrystalline Silicon”. Compared with GB/T 12963-1996, the main changes of this Standard are as follows. -- revise the phosphine resistivity grades from 300Ω•cm, 200Ω•cm, 100Ω•cm to be 500Ω•cm, 300Ω•cm, 200Ω•cm; -- add a term of oxide lamella. This Standard was proposed by National Standardization Technical Committee for Semiconductor Equipment and Materials. This Standard shall be under the jurisdiction of Material Technical Committee of National Standardization Technical Committee for Semiconductor Equipment and Materials. The drafting organization of this Standard. Emei Semiconductor Material Plant. Main drafters of this Standard. Luo Liping, Zhang Huijian and Wang Yan. The previous editions replaced by this Standard are as follows. -- GB/T 12963-1991, GB/T 12963-1996. Specification for Polycrystalline Silicon 1 Scope This Standard specifies the product classification, technical requirements, test methods, inspection rules, mark, transportation as well as storage for the polycrystalline silicon. The polycrystalline silicon, which is manufactured from trichlorosilane or silicon tetrachloride by hydrogen reduction method, is applicable to this Standard. 2 Normative references The following documents contain provisions which, through reference in this text, constitute the provisions of this Standard. For dated reference, the subsequent amendments (excluding corrigendum) or revisions of these publications do not apply. However, all parties who reach an agreement according to this Standard are encouraged to study whether the latest edition of these documents is applicable. For undated references, the latest edition of the normative document is applicable to this Standard. GB/T 1550 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1553 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay GB/T 1558 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on phosphorus under controlled atmosphere GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting on boron GB/T 4061 Polycrystalline silicon - Examination method - Assessment of sandwiches on cross-section by chemical corrosion GB/T 13389 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon 6.3 Inspection item The phosphine resistivity, boron resistivity, n-type minority carrier lifetime, concentration of carbon, structure surface quality and dimension shall be inspected for each batch of product. 6.4 Sample collection and sample preparation 6.4.1 When the supplier is processing the "sample collection" and "sample preparation", the sample collection and sample preparation of phosphine resistivity and boron resistivity shall be carried out according to the requirements of GB/T 4059 and GB/T 4060; the sample collection and sample preparation of section oxide lamella shall be carried out according to the requirements of GB/T 4061. 6.4.2 The sampling scheme for the arbitration shall be agreed by the supplier and purchaser; the sampling location and sample preparation shall be carried out according to 7.4.1. 6.5 Determination of inspection result If one item of the inspection results is unqualified, then the doubling sampling is required to be carried out for the re-inspection of the unqualified item(s). If it is still unqualified, then this batch of products are deemed as unqualified. 7 Mark, Package, Transportation and Storage 7.1 The polycrystalline silicon shall be packed into a clean polyethylene packaging bag after it is cleaned and dried in a certain way; then the packaging bag shall be packed into a packing box. As for the block-shaped polycrystalline silicon, the net weight of each bag shall be 2000 g±20 g, 5000 g±50 g, 10000 g±100g. Each stick of club-shaped polycrystalline silicon shall be packed independently. It is required to protect the polyethylene packaging bag from breakage while packing, so as to avoid the foreign contamination to the product; the good protection shall be provided in an optimal placing way. 7.2 The wordings or marks such as "Handle with Care", "Keep Away From Corrosion, Keep Away from Moisture" shall be marked on the packing box, and indicate. A) Purchaser’s name; B) Product name, designation; C) Number of packages and net weight of the product; D) Supplier’s name. 7.3 Each batch of product shall be accompanied by a Certification of Quality, and noted with. A) Supplier’s name; B) Product name and designation; C) Lot identification mark; D) The gross weight and net weight of product; E) Stamps of each inspection result and inspection department; F) Serial number of this Standard; G) Date of exit-factory. 7.4 The product shall be loaded and unloaded carefully during the transport process; do not press and shove it, and adopt the vibration-proof measures. 7.5 The product shall be stored in a clean and dry environment. 8 Content of Order The following contents shall be included in the order of specified products in this Standard. A) Product designation; B) Serial number of this Standard; C) Other. ......

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