GB/T 42744-2023 English PDFUS$419.00 · In stock
Delivery: <= 4 days. True-PDF full-copy in English will be manually translated and delivered via email. GB/T 42744-2023: Microwave circuit - Measuring methods for electrically controlled attenuator Status: Valid
Basic dataStandard ID: GB/T 42744-2023 (GB/T42744-2023)Description (Translated English): Microwave circuit - Measuring methods for electrically controlled attenuator Sector / Industry: National Standard (Recommended) Classification of Chinese Standard: L56 Classification of International Standard: 31.200 Word Count Estimation: 22,291 Date of Issue: 2023-08-06 Date of Implementation: 2024-03-01 Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration GB/T 42744-2023: Microwave circuit - Measuring methods for electrically controlled attenuator---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.ICS 31.200 CCSL56 National Standards of People's Republic of China microwave circuit Electronically controlled attenuator test method Published on 2023-08-06 2024-03-01 Implementation State Administration for Market Regulation Released by the National Standardization Administration Committee Table of contentsPreface III 1 Scope 1 2 Normative reference documents 1 3 Terms and Definitions 1 4 General requirements 3 4.1 Test environment 3 4.2 Test instrument 3 4.3 Note 4 5 Detailed requirements 4 5.1 Insertion loss (Lins) 4 5.2 In-band fluctuation (ΔL0) 5 5.3 Attenuation (Aatt) 5 5.4 Attenuation flatness (ΔA) 6 5.5 Attenuation range (Aran) 7 5.6 Attenuation temperature stability (Atem), attenuation temperature coefficient (αA) 7 5.7 Attenuation accuracy (Aaur) 8 5.8 Amplitude consistency (ΔAn0) 9 5.9 Phase consistency (Δφn0) 10 5.10 Input and output standing wave ratio (VSWRin, VSWRout) 10 5.11 ndB compression input power (Pi(ndB)) 11 5.12 Intermodulation distortion (dual frequency) (Pn/P1) 13 5.13 n-order intersection point input power (IIPn) 14 5.14 Additional phase shift (Phrlv) 14 5.15 Turn-on time (ton), turn-off time (toff), rise time (trise), fall time (tfal) 15 5.16 Maximum power withstand (Pmax) 16ForewordThis document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. Chengdu Yaguang Electronics Co., Ltd., Anhui Mingyang Electronics Co., Ltd., Anhui Zhongzhike Standardization Research Institute Co., Ltd., the Military Representative Bureau of the Air Force Equipment Department in Chengdu, and the China Electronics Technology Standardization Institute. The main drafters of this document. Long Hui, Yang Xiaoyu, Liu Yingying, Chen Min, Tang Shuo, Zhou Jun, Meng Ze, He Yaping, Fan Fuhong, Liu Xun, Wang Hao, Fu Jiangwei, Hou Lin. microwave circuit Electronically controlled attenuator test method1 ScopeThis document describes the testing methods for the main electrical parameters of electronically controlled attenuators in microwave circuits. This document is applicable to the relevant electrical parameter testing of monolithic and hybrid integrated microwave electrically adjustable attenuators (hereinafter referred to as attenuators).2 Normative reference documentsThe contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 17573-1998 Semiconductor devices Discrete devices and integrated circuits Part 1.General principles3 Terms and definitionsThe following terms and definitions apply to this document. 3.1 Insertion lossinsertionloss Lins In the linear working area of the attenuator, the ratio of incident power to output power in the reference state. 3.2 In-band ripple passbandripple ΔL0 The maximum change in reference state insertion loss in decibels (dB) at different frequencies. 3.3 attenuationattenuationvalue Att In the linear working area of the attenuator, the attenuation state insertion loss and reference state insertion loss under the specified control voltage are expressed in decibels (dB). bit difference. 3.4 attenuation flatness attenuationflatness ΔA At different frequencies, the maximum change in attenuation at a specified control voltage in decibels (dB). 3.5 attenuation range attenuationrange Aran The available attenuation controls the maximum amount of attenuation. ......Tips & Frequently Asked Questions:Question 1: How long will the true-PDF of GB/T 42744-2023_English be delivered?Answer: Upon your order, we will start to translate GB/T 42744-2023_English as soon as possible, and keep you informed of the progress. 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