GB/T 40110-2021 English PDF

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GB/T 40110-2021: Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Status: Valid

Standard ID	USD	BUY PDF	Lead-Days	Standard Title (Description)	Status
GB/T 40110-2021	494	Add to Cart	5 days	Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy	Valid

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Basic data

Standard ID: GB/T 40110-2021 (GB/T40110-2021)
Description (Translated English): Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: G04
Word Count Estimation: 26,227
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 40110-2021: Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
Surface chemical analysis-Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy ICS 71.040.40 CCSG04 National Standards of People's Republic of China Surface chemical analysis Total reflection X-ray fluorescence spectrometry (TXRF) Determination of element contamination on the surface of silicon wafers (ISO 14706.2014, IDT) Released on 2021-05-21 2021-12-01 implementation State Administration of Market Supervision and Administration Issued by the National Standardization Management Committee

Table of contents

Foreword Ⅲ Introduction Ⅳ 1 Scope 1 2 Normative references 1 3 Terms and definitions 1 4 Abbreviations 2 5 Principle 2 6 Equipment 2 7 Sample preparation and measurement environment 2 8 Calibration reference materials 3 9 Security 3 10 Measurement procedure 3 11 Result expression 4 12 Precision 5 13 Test report 5 Appendix A (informative) Reference material 6 Appendix B (informative) Relative sensitivity factor 7 Appendix C (informative) Preparation of reference materials 10 Appendix D (informative) VPD-TXRF method 13 Appendix E (Informative) Glance Angle Setting 14 Appendix F (informative) International inter-laboratory test results 17 Reference 20

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. This document is equivalent to ISO 14706.2014 "Surface Chemical Analysis Total Reflection X-ray Fluorescence Spectrometry (TXRF) Determination of Silicon Wafer Surface Surface element pollution." The Chinese documents that have consistent correspondence with the normatively cited international documents in this document are as follows. ---GB/T 25915.1-2010 Clean room and related controlled environment Part 1.Air cleanliness level (ISO 14644-1. 1999, IDT) Please note that some of the contents of this document may involve patents. The issuing agency of this document is not responsible for identifying patents. This document was proposed and managed by the National Standardization Technical Committee for Microbeam Analysis (SAC/TC38). This document was drafted by. China Institute of Metrology, South China University of Technology. The main drafters of this document. Wang Hai, Zhang Airui, Wang Meiling, Ren Danhua, Xu Xinrong, Fan Yan.

Introduction

This document is formulated for the need to measure elemental contamination on the surface of silicon wafers. It is based on ASTMF1526, SEMIM33, and basic semiconductors. A UCS issued by the Institute of Basic Semiconductor Technology Development (Institute of Basic Semiconductor Technology Development) (Ultra-CleanSociety, Ultra-Clean Society) developed on the basis of standardized documents. TXRF requires the use of reference materials for quantitative analysis. A certified reference material with an atomic surface density lower than 1010atoms/cm2 is difficult To get. Even if it is available, pollution introduced from the environment may shorten the validity period of these reference materials. For calibration purposes, relevant analytical laboratories will need to prepare and analyze TXRF reference materials. Therefore, it needs to be formulated separately Two standardized documents are prepared for TXRF measurement procedures and reference materials. This document is the former, which is about the standardization of TXRF measurement procedures file. Surface chemical analysis Total reflection X-ray fluorescence spectrometry (TXRF) Determination of element contamination on the surface of silicon wafers

1 Scope

This document describes TXRF that measures the surface density of atoms contaminated by elements on the surface of silicon wafers that have been chemically mechanically polished or epitaxially grown. method. This document applies to the following situations. ---Elements with atomic numbers from 16 (S) to 92 (U); ---Polluting elements with atomic surface density between 1×1010atoms/cm2~1×1014atoms/cm2; ---The atomic surface density obtained by the VPD (Vapour Phase Decomposition) sample preparation method is between 5×108atoms/cm2~5×1012at- Contaminant elements between oms/cm2 (see 3.4).

2 Normative references

The contents of the following documents constitute the indispensable clauses of this document through normative references in the text. Among them, dated quotations Only the version corresponding to that date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to This document. ISO 14644-1 Clean room and related control environment Part 1.Air cleanliness level (Cleanrooms and associated controledenvironments-Part 1.Classificationofaircleanliness)

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Total reflection When grazing incident X-rays are irradiated to a medium with a larger X-ray density, the complete reflection occurs at the boundary of the two mediums. Note. The refractive index of silicon wafers for X-rays is less than 1.X-rays incident on the surface of the silicon wafer at a small grazing angle will be totally reflected on the surface of the silicon wafer. The angle of fire is equal to the glancing angle. 3.2 Glancing angle The angle between the plane of the sample surface and the virtual plane containing the X-rays incident on the sample surface. 3.3 Criticalangle The grazing angle corresponding to the first inflection point in the graph of sample matrix X-ray fluorescence intensity and grazing angle. 3.4 VPD-TXRF method VPD-TXRF method A method of collecting surface impurities through the VPD program. Use a drop of collection reagent (usually ultra-pure hydrofluoric acid) to collect oxygen on the surface of the silicon wafer The non-volatile product formed after the acid decomposition of the compound is then dried in the least polluted environment, and the final droplet residue formed is used ......

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