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SJ/T 11624-2016 PDF English


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SJ/T 11624-2016: PDF in English (SJT 11624-2016)

SJ/T 11624-2016 SJ ELECTRONIC INDUSTRY STANDARD OF THE PEOPLE’S REPUBLIC OF CHINA ICS 31.120 L 63 Record No.: Specifications of LED Devices for LED Displays ISSUED ON: APRIL 05, 2016 IMPLEMENTED ON: SEPTEMBER 01, 2016 Issued by: Ministry of Industry and Information Technology of PRC Table of Contents Foreword ... 3 1 Scope ... 4 2 Normative References ... 4 3 Terms and Definitions ... 5 4 Classification ... 5 5 Requirements ... 6 6 Inspection Methods ... 8 7 Inspection Rules ... 11 8 Additional Instructions ... 16 Appendix A (Normative) Electrical Endurance Test ... 18 Appendix B (Normative) Test on Resistance to Welding Heat – Simulated Reflow Soldering ... 20 Specifications of LED Devices for LED Displays 1 Scope This Specification specifies the performance requirements, inspection methods, inspection rules, etc. of light-emitting diode (hereinafter referred to as "LED") used in light-emitting diode (LED) displays. This Specification is applicable to LED used in indoor and outdoor LED displays. 2 Normative References The following documents are essential to the application of this document. For the dated documents, only the versions with the dates indicated are applicable to this document; for the undated documents, only the latest version (including all the amendments) is applicable to this document. GB/T 2423.3 Environmental Testing for Electric and Electronic Products - Part 2: Testing Method Test Cab: Damp Heat Steady State GB/T 4589.1-2006 Semiconductor Devices - Part 10: Generic Specification for Discrete Devices and Integrated Circuits GB/T 4937-1995 Mechanical and Climatic Test Methods for Semiconductor Devices GB/T 11499-2001 Letter Symbols for Discrete Semiconductor Devices GB/T 12565-1990 Semiconductor Devices Sectional Specification for Optoelectronic Devices GB/T 15651 Semiconductor Devices Discrete Devices and Integrated Circuits Part 5: Optoelectronic Devices SJ/T 11394-2009 Measure Methods of Semiconductor Light Emitting Diodes SJ/T 11395-2009 Semiconductor Lighting Terminology SJ/T 11400-2009 Semiconductor Optoelectronic Devices - Blank Detail Specification for Lower-Power Light-Emitting Diodes a) Temperature: 25°C±2°C; b) Relative humidity: 45%~55%; c) Air pressure: 86kPa~106kPa 6.1.2 Darkroom conditions The darkroom conditions shall be ≤1 lx. 6.2 Appearance Under the conditions of environmental illumination of 300 lx~1000 lx, use a 3× to 10× magnifier for inspection. 6.3 Overall dimensions Use measuring tools that meet the accuracy requirements for measurement. 6.4 Measuring methods of photoelectric characteristics 6.4.1 Forward voltage It shall be carried out according to the Method-1001 in SJ/T 11394-2009. 6.4.2 Average luminous intensity It shall be carried out according to the Method-2001 in SJ/T 11394-2009. 6.4.3 Half-intensity angle It shall be carried out according to the Method-2002 in SJ/T 11394-2009. 6.4.4 Reverse current It shall be carried out according to the Method-1003 in SJ/T 11394-2009. 6.4.5 Dominant wavelength It shall be carried out according to the Method-4003 in SJ/T 11394-2009. 6.4.6 Chromaticity coordinate It shall be carried out according to the Method-4001/4002 in SJ/T 11394-2009. 6.5 Electrostatic discharge sensitivity The human body mode shall be carried out according to the Method-6001 in SJ/T 11394-2009. IVmin – the minimum actually-measured average luminous intensity; the unit of average luminous intensity is cd; IVD – average value of the average luminous intensity actually-measured for a lot of samples; the unit of average luminous intensity is cd. The change range of half-intensity angle shall be calculated as per Formula (4): Where: Δα – change range of half-intensity angle; the unit of half-intensity angle is °; αmax – the maximum actually-measured half-intensity angle; the unit of half-intensity angle is °; αmin – the minimum actually-measured half-intensity angle; the unit of half-intensity angle is °. 6.7 Environmental adaptability It shall be carried out according to the provisions in Tables 5, 6 and 7. 7 Inspection Rules 7.1 General The quality assessment procedure of LED shall comply with the provisions of GB/T 4589.1-2006, GB/T 12565-1990 and this Specification. The quality assessment category is Class-II. 7.2 Classification of the inspection The inspections specified in this Specification are divided into the following categories: a) Inspection for identification and (see 7.3); b) Inspection for quality consistency (see 7.4). 7.3 Inspection for identification The inspection for identification shall be carried out in accordance with the inspection items, inspection requirements and sampling plan specified in Tables 4, 5 and 6. Appendix B (Normative) Test on Resistance to Welding Heat – Simulated Reflow Soldering B.1 Purpose In order to evaluate the ability of surface-mounted LED devices to withstand welding heat within the specified temperature and time conditions, this test is exempted from pre-treatment, does not use flux or solder for soldering; and only simulates the reflow soldering test procedures. B.2 Test conditions The conditions of the test on resistance to welding heat are as follows: a) Maximum temperature Class A: temperature 240°C ± 2°C; Class B: temperature 250°C ± 2°C; Class C: temperature 260°C ± 2°C; b) Maximum temperature duration: 10s ± 1s; c) Cycle: 3 times at intervals of 5 min ~ 8 min each. B.3 Test procedures Follow the procedures below: a) The sample to be tested is placed on a printed circuit board, and the printed circuit board shall have vias; b) Test according to the reflow soldering temperature time curve and disc size given in the LED product specification. The maximum temperature and duration shall be in accordance with the provisions of B.2. c) Repeat the test for three times according to the above steps, each test interval is 5 min~8 min. ......
 
Source: Above contents are excerpted from the PDF -- translated/reviewed by: www.chinesestandard.net / Wayne Zheng et al.