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Std ID |
Description (Standard Title) |
Detail |
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SJ 3225-1989
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Fundamental performance requirements and classification for remote control system for use in colour television broadcast receivers
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SJ 3225-1989
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SJ 3226-1989
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Test methods for ceramics-motal sealing strength against teusion
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SJ 3226-1989
|
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SJ 3227-1989
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Test methods for properties parameters of thermal tubes for use in electronic equipment
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SJ 3227-1989
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SJ 3228.10-1989
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Determination of Lead in high purity arenaceous quartz
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SJ 3228.10-1989
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SJ 3228.1-1989
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Specification for high purty arenaceous quartz for use in electronic industry
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SJ 3228.1-1989
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SJ 3228.2-1989
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General rules for methods of analysis for high purity arenaceous quartz
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SJ 3228.2-1989
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SJ 3228.3-1989
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Determination of loss on ignition in high purity arenaceous quartz
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SJ 3228.3-1989
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SJ 3228.4-1989
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Determination of silicon oxide in high purity arenaceous quartz
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SJ 3228.4-1989
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SJ 3228.5-1989
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Determination of Iron in high purity arenaceous quartz
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SJ 3228.5-1989
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SJ 3228.6-1989
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Determination of Copper in high purity arenaceous quartz
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SJ 3228.6-1989
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SJ 3228.7-1989
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Determination of Chromium in high purity arenaceous quartz
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SJ 3228.7-1989
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SJ 3228.8-1989
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Determination of Alumiuium in high purity arenacous quartz
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SJ 3228.8-1989
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SJ 3228.9-1989
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Determination of Chlorine in high purity arenaceous quartz
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SJ 3228.9-1989
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SJ 3230-1989
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Test methods for natural cooling temperature in electronic equipment
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SJ 3230-1989
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SJ 3231-1989
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(Low penetration welding glass powder)
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SJ 3231-1989
|
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SJ 323-1972
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(Nickel-plated iron belt)
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SJ 323-1972
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SJ 3232.1-1989
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(Low melting solder glass powder softening temperature of the test method)
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SJ 3232.1-1989
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SJ 3232.2-1989
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(Test Method for Low penetration welding residual stresses in the glass frit bonding)
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SJ 3232.2-1989
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SJ 3232.3-1989
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(Low melting solder glass powder flowability test methods)
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SJ 3232.3-1989
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SJ 3232.4-1989
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(Low melting solder glass powder crystallization time measurement method)
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SJ 3232.4-1989
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SJ 3233-1989
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Supports and glass bar of electron gun for vacuum electronic devices
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SJ 3233-1989
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SJ 3234-1989
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Test method for dynamic relating to vacuum gas emission properties of electronic material
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SJ 3234-1989
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SJ 3235-1989
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Ribbon getter made of Zirconium and Aluminium
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SJ 3235-1989
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SJ 3236-1989
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Method for determination of trace oxygen in electronic grade gases--Phosphor scintillating method
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SJ 3236-1989
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SJ 3237-1989
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Method for determination of trace oxygen in electronic grade Argon--Argon ionization gas chromatography method
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SJ 3237-1989
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SJ 3238-1989
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Method for determination of trace Nitrogen in electronic grade Argon--Argon ionization gas chromatography method
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SJ 3238-1989
|
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SJ 3239-1989
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General requirement for gas chromatography analysis method
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SJ 3239-1989
|
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SJ 3240-1989
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Method for determination of trace Methane and hydrogen in electronic grade Argon--Argon ionization gas chromatography method
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SJ 3240-1989
|
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SJ 3241-1989
|
Gallium arsenide single-crystal bar and wafer
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SJ 3241-1989
|
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SJ 324-1972
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Molybdenum plates
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SJ 324-1972
|
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SJ 3242-1989
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Gallium arsenide epitaxy wafers
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SJ 3242-1989
|
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SJ 3243-1989
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Indium phosphide single-crystal bar and wafers
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SJ 3243-1989
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SJ 3244.1-1989
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Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide
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SJ 3244.1-1989
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SJ 3244.2-1989
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Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction
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SJ 3244.2-1989
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SJ 3244.3-1989
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Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
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SJ 3244.3-1989
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SJ 3244.4-1989
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Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method
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SJ 3244.4-1989
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SJ 3244.5-1989
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Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
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SJ 3244.5-1989
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SJ 3245-1989
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Methods for measuring dislocation of Indium phosphide single-crystal
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SJ 3245-1989
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SJ 3246-1989
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Methods for measuring Aluminium component in Aluminium-Gallium-Arsenic by phosphors method
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SJ 3246-1989
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SJ 3247-1989
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Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference
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SJ 3247-1989
|
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SJ 3248-1989
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Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
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SJ 3248-1989
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SJ 3249.1-1989
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Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material
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SJ 3249.1-1989
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SJ 3249.2-1989
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Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption
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SJ 3249.2-1989
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SJ 3249.3-1989
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Methods of measurement for chromium concentration in semi-insulation Gallium arsenide by infra-red absorption
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SJ 3249.3-1989
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SJ 3249.4-1989
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(Semi-insulating gallium arsenide infrared absorption in EL2 concentration test methods)
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SJ 3249.4-1989
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SJ 3250-1989
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Grades of power and energy for gas laser devices
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SJ 3250-1989
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SJ 3251-1989
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General specification for antiairoraft gun radar antenna
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SJ 3251-1989
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SJ 3252-1989
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General specification for tape transmission system of popularized small recorders
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SJ 3252-1989
|
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SJ 3253-1989
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General requirements of inspection procedures for preparation of measuring equipment in electronic industry
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SJ 3253-1989
|
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SJ 3254-1989
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Methods for screen of samples of medium-low power transistors for measurements
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SJ 3254-1989
|
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SJ 3258-1989
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General specification for popularized small recorders
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SJ 3258-1989
|
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SJ 3259-1989
|
General specification for resonator with tuning fork and tablet
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SJ 3259-1989
|
|
SJ 3260-1989
|
Methods of measurement for electric properties of resonator with tuning fork and tablet
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SJ 3260-1989
|
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SJ 3261-1989
|
Temperature fuses, Type RWH1
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SJ 3261-1989
|
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SJ 3262-1989
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General specification for packaging materials for use in electronic components
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SJ 3262-1989
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SJ 3263-1989
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(Broadcast receivers and associated equipment conducted immunity characteristic limit value)
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SJ 3263-1989
|
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SJ 3264-1989
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General specification for electronic organ
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SJ 3264-1989
|
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SJ 3265-1989
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Methods of measurement for acoustic performance of electronic organ
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SJ 3265-1989
|
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SJ 3266-1989
|
System for radio calling system
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SJ 3266-1989
|
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SJ 3267-1989
|
Ribbons of Nickel-coated Iron for use in vacuum tubes
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SJ 3267-1989
|
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SJ 3268-1989
|
Double side Aluminium-plated Iron strips and Nickel-Iron-Aluminium alloy strips
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SJ 3268-1989
|
|
SJ 3269-1989
|
Copper-plated Iron wire and Nickel-plated Iron wire for vacuum divices
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SJ 3269-1989
|
|
SJ 3272-1990
|
Safety requirements for resistors
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SJ 3272-1990
|
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SJ 3274-1990
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Safety requirements for single-phase A. C. power supply switches
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SJ 3274-1990
|
|
SJ 3275-1990
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Safety requirements for one-sided printed circuits boards made of paper
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SJ 3275-1990
|
|
SJ 3277-1990
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Cartridge fuse-links for miniature fuses
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SJ 3277-1990
|
|
SJ 332-1973
|
Generic specification for receiving tubes, high reliability, subminiature and finger-shaped
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SJ 332-1973
|
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SJ 338-1973
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General specification for high-voltage rectifier tubes
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SJ 338-1973
|
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SJ 343-1973
|
Generic specification for gas-filled microwave switching tubes
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SJ 343-1973
|
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SJ 344-1973
|
General specification for low noise travelling wave tubes
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SJ 344-1973
|
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SJ 345-1973
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General specification for power travelling wave tubes
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SJ 345-1973
|
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SJ 346-1973
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General specification for O-Type backward wave tubes
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SJ 346-1973
|
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SJ 347-1973
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Generic specification for reflex klystrons
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SJ 347-1973
|
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SJ 362-1973
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Measurement conditions for reflex klystrons
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SJ 362-1973
|
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SJ 363-1973
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Measurement of reflector total current, reflector ion current and reflector leakage current of reflex klystrons
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SJ 363-1973
|
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SJ 364-1973
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Measurement of cathode current of reflex klystrons
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SJ 364-1973
|
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SJ 365-1973
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Measurement of cathode current variation ratio of reflex klystrons as heater current changes
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SJ 365-1973
|
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SJ 366-1973
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Measurement of interelectrode leakage current of reflex klystrons
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SJ 366-1973
|
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SJ 367-1973
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Measurement of output power of reflex klystrons
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SJ 367-1973
|
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SJ 368-1973
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Measurement of power ripple ratio of reflex klystrons
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SJ 368-1973
|
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SJ 369-1973
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Measurement of oscillation frequency of reflex klystrons
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SJ 369-1973
|
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SJ 370-1973
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Measurement of electronic tuning range of reflex klystrons
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SJ 370-1973
|
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SJ 371-1973
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Measurement of anti-overloading performance of reflex klystronss
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SJ 371-1973
|
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SJ 37-1977
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(Production equipment for the electronics industry type designation)
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SJ 37-1977
|
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SJ 372-1973
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Measurement of electronic tuning slope of reflex klystrons
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SJ 372-1973
|
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SJ 373-1973
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Measurement of frequency pulling of reflex klystrons
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SJ 373-1973
|
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SJ 374-1973
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Measurement of load characteristic of reflex klystrons
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SJ 374-1973
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SJ 375-1973
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Measurement of of pulse modulation characteristic of reflex klystrons
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SJ 375-1973
|
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SJ 376-1973
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Measuremnt of electronic tuning hysteresis of reflex klystrons
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SJ 376-1973
|
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SJ 377-1973
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Measurement of frequency drift coefficient of reflex klystrons
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SJ 377-1973
|
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SJ 378-1973
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Measurement of oscillation stability time of reflex klystron
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SJ 378-1973
|
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SJ 379-1973
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Measurement of frequency drift of reflex klystrons
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SJ 379-1973
|
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SJ 380-1973
|
Measurement of frequency stability of reflex klystrons
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SJ 380-1973
|
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SJ 381-1973
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Measurement of frequency temperature coefficient of reflex klystrons
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SJ 381-1973
|
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SJ 382-1973
|
Measurement of frequency resettability of reflex klystrons
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SJ 382-1973
|
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SJ 419-1973
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Measurement conditions for low noise travelling wave tubes
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SJ 419-1973
|
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SJ 420-1973
|
Methods of measurement for voltages and currents on per-electrode of low noise travelling wave tubes
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SJ 420-1973
|
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SJ 421-1973
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Methods of measurement for leakage current between last anode and each electrode of low noise travelling wave tubes
|
SJ 421-1973
|
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SJ 42-1964
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(Chinese Industry Standard)
|
SJ 42-1964
|
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SJ 42-1977
|
Classification properties, field of applications and marking of metallic coaings and chemically treated layers
|
SJ 42-1977
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