GB/T 42838-2023 English PDF

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GB/T 42838-2023: Semiconductor integrated circuits - Measuring method of Holzer circuit
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Basic data

Standard ID: GB/T 42838-2023 (GB/T42838-2023)
Description (Translated English): Semiconductor integrated circuits - Measuring method of Holzer circuit
Sector / Industry: National Standard (Recommended)
Classification of Chinese Standard: L56
Classification of International Standard: 31.200
Word Count Estimation: 14,128
Date of Issue: 2023-08-06
Date of Implementation: 2023-12-01
Issuing agency(ies): State Administration for Market Regulation, China National Standardization Administration

GB/T 42838-2023: Semiconductor integrated circuits - Measuring method of Holzer circuit

---This is a DRAFT version for illustration, not a final translation. Full copy of true-PDF in English version (including equations, symbols, images, flow-chart, tables, and figures etc.) will be manually/carefully translated upon your order.
ICS 31.200 CCSL56 National Standards of People's Republic of China Semiconductor integrated circuit Hall circuit test method Published on 2023-08-06 Implemented on 2023-12-01 State Administration for Market Regulation Released by the National Standardization Administration Committee

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1.Structure and Drafting Rules of Standardization Documents" Drafting. Please note that some content in this document may be subject to patents. The publisher of this document assumes no responsibility for identifying patents. This document is proposed by the Ministry of Industry and Information Technology of the People's Republic of China. This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78). This document was drafted by. China Electronics Technology Standardization Institute, Nanjing Zhongxu Electronic Technology Co., Ltd., Hefei Meiling IoT Technology Co., Ltd. Co., Ltd., Beijing Microelectronics Technology Research Institute, Dongguan Guomeng Motor Co., Ltd. The main drafters of this document. Yin Hang, Liu Fang, He Wanhai, Tang Shiming, Zhang Fan, and Liu Deguang. Semiconductor integrated circuit Hall circuit test method

1 Scope

This document specifies the electrical characteristics testing methods for semiconductor integrated circuit Hall circuits (hereinafter referred to as devices). This document is suitable for testing the electrical characteristics of the Hall circuit of semiconductor integrated circuits.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document. GB/T 17574-1998 Semiconductor devices integrated circuits Part 2.Digital integrated circuits

3 Terms and definitions

The following terms and definitions apply to this document. 3.1 Magnetic induction intensity at operating point magneticoperatepoint The number of magnetic field lines passing perpendicularly through unit area at the operating point. 3.2 Release point magnetic induction intensity magnetic release point The number of magnetic field lines passing perpendicularly through unit area at the release point. 3.3 return difference returndifference BH Within the entire measurement range of the instrument, the maximum deviation between the two characteristic curves obtained by the upward and downward movements of the measured value. 3.4 output rise timeoutputrisetime tr The time required for the circuit output to change from low level to high level. 3.5 Output fall timeoutputfaltime tf The time it takes for the circuit output to change from high level to low level. ......

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